Invention Grant
- Patent Title: Manufacturing methods of semiconductor devices
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Application No.: US16845459Application Date: 2020-04-10
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Publication No.: US11092885B2Publication Date: 2021-08-17
- Inventor: Akio Misaka , Noyoung Chung , Woonhyuk Choi
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Myers Bigel, P.A.
- Priority: KR10-2019-0109625 20190904
- Main IPC: G06F30/30
- IPC: G06F30/30 ; G03F1/36 ; G06F30/392 ; G06F30/367 ; G06F30/3953 ; G06F30/398

Abstract:
A method of manufacturing a semiconductor device includes randomly placing a plurality of standard cells from a library in which the standard cells are pre-stored, designing an interconnection pattern in which the standard cells are connected randomly to each other, connecting the standard cells according to the interconnection pattern to generate a virtual layout, performing an optical proximity correction operation on the virtual layout using an optical proximity correction (OPC) model, and forming and verifying a mask corresponding to the virtual layout on which the optical proximity correction operation is performed.
Public/Granted literature
- US20210063867A1 MANUFACTURING METHODS OF SEMICONDUCTOR DEVICES Public/Granted day:2021-03-04
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