Invention Grant
- Patent Title: Semiconductor devices including through-silicon-vias and methods of manufacturing the same and semiconductor packages including the semiconductor devices
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Application No.: US15936019Application Date: 2018-03-26
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Publication No.: US11094612B2Publication Date: 2021-08-17
- Inventor: Ju-Il Choi , Kwang-Jin Moon , Byung-Lyul Park , Jin-Ho An , Atsushi Fujisaki
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Sughrue Mion, PLLC
- Priority: KR10-2014-0126143 20140922
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/00 ; H01L21/768 ; H01L23/532 ; H01L25/065 ; H01L25/18
Abstract:
A semiconductor device can include a substrate that has a surface. A via structure can extend through the substrate toward the surface of the substrate, where the via structure includes an upper surface. A pad structure can be on the surface of the substrate, where the pad structure can include a lower surface having at least one protrusion that is configured to protrude toward the upper surface of the via structure.
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