- 专利标题: Integrated circuit and method of manufacturing same
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申请号: US16674869申请日: 2019-11-05
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公开(公告)号: US11100273B2公开(公告)日: 2021-08-24
- 发明人: Shih-Wei Peng , Chih-Liang Chen , Charles Chew-Yuen Young , Hui-Zhong Zhuang , Jiann-Tyng Tzeng , Shun Li Chen , Wei-Cheng Lin
- 申请人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 申请人地址: TW Hsinchu
- 专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址: TW Hsinchu
- 代理机构: Hauptman Ham, LLP
- 主分类号: G06F30/00
- IPC分类号: G06F30/00 ; G06F30/398 ; H01L27/02 ; H01L27/118 ; G06F30/39 ; G06F30/394
摘要:
A method of forming an integrated circuit includes generating, by a processor, a layout design of the integrated circuit based on a set of design rules and manufacturing the integrated circuit based on the layout design. The generating of the layout design includes generating a set of active region layout patterns extending in a first direction, generating a set of gate layout patterns extending in a second direction, and generating a cut feature layout pattern extending in the first direction, overlapping at least a first gate layout pattern of the set of gate layout patterns, being separated from the set of active region layout patterns in the second direction by at least a first distance. The first distance satisfying a first design rule of the set of design rules.
公开/授权文献
- US20200074044A1 INTEGRATED CIRCUIT AND METHOD OF MANUFACTURING SAME 公开/授权日:2020-03-05
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