- 专利标题: Wafer level embedded heat spreader
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申请号: US16231783申请日: 2018-12-24
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公开(公告)号: US11101192B2公开(公告)日: 2021-08-24
- 发明人: Wei Sen Chang , Tsung-Hsien Chiang , Yen-Chang Hu , Ching-Wen Hsiao
- 申请人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址: TW Hsinchu
- 专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址: TW Hsinchu
- 代理机构: Slater Matsil, LLP
- 主分类号: H01L23/433
- IPC分类号: H01L23/433 ; H01L23/00 ; H01L23/498 ; H01L23/538 ; H01L21/56
摘要:
Disclosed herein is a device having an embedded heat spreader and method for forming the same. A carrier substrate may comprise a carrier, an adhesive layer, a base film layer, and a seed layer. A patterned mask is formed with a heat spreader opening and via openings. Vias and a heat spreader may be formed in the pattern mask openings at the same time using a plating process and a die attached to the head spreader by a die attachment layer. A molding compound is applied over the die and heat spreader so that the heat spreader is disposed at the second side of the molded substrate. A first RDL may have a plurality of mounting pads and a plurality of conductive lines is formed on the molded substrate, the mounting pads may have a bond pitch greater than the bond pitch of the die contact pads.
公开/授权文献
- US20190148264A1 Wafer Level Embedded Heat Spreader 公开/授权日:2019-05-16
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