公开(公告)号：US09368460B2

公开(公告)日：2016-06-14

申请号：US13937726

申请日：2013-07-09

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Chen-Hua Yu ,  Yen-Chang Hu ,  Ching-Wen Hsiao ,  Mirng-Ji Lii ,  Chung-Shi Liu ,  Chien Ling Hwang ,  Chih-Wei Lin ,  Chen-Shien Chen

IPC分类号： H01L23/00 ,  H01L21/56 ,  H01L23/538 ,  H01L23/29 ,  H01L23/31 ,  H01L23/525

CPC分类号： H01L24/02 ,  H01L21/561 ,  H01L21/568 ,  H01L23/293 ,  H01L23/3185 ,  H01L23/3192 ,  H01L23/525 ,  H01L23/5389 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L24/19 ,  H01L24/96 ,  H01L24/97 ,  H01L2224/0231 ,  H01L2224/02315 ,  H01L2224/0235 ,  H01L2224/02379 ,  H01L2224/02381 ,  H01L2224/024 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/05008 ,  H01L2224/05016 ,  H01L2224/05017 ,  H01L2224/05022 ,  H01L2224/05124 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05567 ,  H01L2224/05573 ,  H01L2224/05647 ,  H01L2224/05666 ,  H01L2224/11002 ,  H01L2224/12105 ,  H01L2224/13007 ,  H01L2224/13024 ,  H01L2224/13111 ,  H01L2224/1411 ,  H01L2224/97 ,  H01L2924/181 ,  H01L2924/18162 ,  H01L2224/03 ,  H01L2224/05644 ,  H01L2924/00014 ,  H01L2224/05624 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2924/00

摘要： A method embodiment includes forming a sacrificial film layer over a top surface of a die, the die having a contact pad at the top surface. The die is attached to a carrier, and a molding compound is formed over the die and the sacrificial film layer. The molding compound extends along sidewalls of the die. The sacrificial film layer is exposed. The contact pad is exposed by removing at least a portion of the sacrificial film layer. A first polymer layer is formed over the die, and a redistribution layer (RDL) is formed over the die and electrically connects to the contact pad.

摘要翻译： 方法实施例包括在模具的顶表面上形成牺牲膜层，模具在顶表面具有接触垫。 模具附接到载体上，并且在模具和牺牲膜层上形成模塑料。 模塑料沿模具的侧壁延伸。 牺牲膜层被暴露。 通过去除牺牲膜层的至少一部分来暴露接触垫。 在模具上形成第一聚合物层，并且在芯片上形成再分配层（RDL），并且电连接到接触焊盘。

公开(公告)号：US20150303158A1

公开(公告)日：2015-10-22

申请号：US14788304

申请日：2015-06-30

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Yu-Chih Huang ,  Yen-Chang Hu ,  Ching-Wen Hsiao ,  Chen-Shien Chen

IPC分类号： H01L23/00 ,  H01L21/56

CPC分类号： H01L24/11 ,  H01L21/486 ,  H01L21/563 ,  H01L23/49816 ,  H01L23/49822 ,  H01L23/49827 ,  H01L23/5389 ,  H01L24/19 ,  H01L2224/02317 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/73267 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/18162 ,  H01L2924/00

摘要： A method of forming a die package includes forming a conductive column over a first side of a carrier, attaching a semiconductor die to the first side of the carrier, and forming a molding compound over the first side of the carrier. The semiconductor die and the conductive column are embedded in the molding compound. A second side of the carrier opposite the first side is under a compressive stress. The method also includes forming a first compressive dielectric layer over the semiconductor die, the conductive column, and the molding compound, forming a first redistribution layer (RDL) over the first compressive dielectric layer, and forming a first passivation layer over the first RDL.

摘要翻译： 形成管芯封装的方法包括在载体的第一侧上形成导电柱，将半导体管芯附接到载体的第一侧，并在载体的第一侧上形成模塑料。 将半导体管芯和导电柱嵌入模塑料中。 载体与第一侧相对的第二侧处于压缩应力下。 该方法还包括在半导体管芯，导电柱和模塑料上形成第一压电介电层，在第一压缩介电层上形成第一再分布层（RDL），以及在第一RDL上形成第一钝化层。

公开(公告)号：US09035461B2

公开(公告)日：2015-05-19

申请号：US13754518

申请日：2013-01-30

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Yen-Chang Hu ,  Ching-Wen Hsiao ,  Chen-Shien Chen

IPC分类号： H01L29/40 ,  H01L23/538 ,  H01L21/56 ,  H01L23/00

CPC分类号： H01L25/0657 ,  H01L21/56 ,  H01L21/568 ,  H01L23/293 ,  H01L23/3107 ,  H01L23/481 ,  H01L23/49811 ,  H01L23/50 ,  H01L23/5384 ,  H01L23/5389 ,  H01L24/06 ,  H01L24/19 ,  H01L2224/02372 ,  H01L2224/02379 ,  H01L2224/0239 ,  H01L2224/024 ,  H01L2224/04105 ,  H01L2224/05024 ,  H01L2224/12105 ,  H01L2224/16227 ,  H01L2224/19 ,  H01L2224/32245 ,  H01L2224/73267 ,  H01L2225/06541 ,  H01L2924/01029 ,  H01L2924/01322 ,  H01L2924/06 ,  H01L2924/0665 ,  H01L2924/07025 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/18162 ,  H01L2924/00 ,  H01L2224/83005

摘要： Packaged semiconductor devices and packaging methods are disclosed. In some embodiments, a packaged semiconductor device includes an integrated circuit die and through-vias disposed in a molding compound. A first redistribution layer (RDL) is disposed over a first side of the through-vias, the integrated circuit die, and the molding compound. A second RDL is disposed over a second side of the through-vias, the integrated circuit die, and the molding compound. Contact pads are disposed over the second RDL. An insulating material of the second RDL includes a recess around a perimeter of one of the contact pads.

摘要翻译： 公开了封装的半导体器件和封装方法。 在一些实施例中，封装半导体器件包括集成电路管芯和设置在模制化合物中的通孔。 第一再分布层（RDL）设置在通孔，集成电路管芯和模塑料的第一侧上。 第二RDL设置在通孔，集成电路管芯和模制化合物的第二侧上。 接触垫设置在第二RDL上。 第二RDL的绝缘材料包括围绕其中一个接触垫的周边的凹部。

公开(公告)号：US11101192B2

公开(公告)日：2021-08-24

申请号：US16231783

申请日：2018-12-24

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Wei Sen Chang ,  Tsung-Hsien Chiang ,  Yen-Chang Hu ,  Ching-Wen Hsiao

IPC分类号： H01L23/433 ,  H01L23/00 ,  H01L23/498 ,  H01L23/538 ,  H01L21/56

摘要： Disclosed herein is a device having an embedded heat spreader and method for forming the same. A carrier substrate may comprise a carrier, an adhesive layer, a base film layer, and a seed layer. A patterned mask is formed with a heat spreader opening and via openings. Vias and a heat spreader may be formed in the pattern mask openings at the same time using a plating process and a die attached to the head spreader by a die attachment layer. A molding compound is applied over the die and heat spreader so that the heat spreader is disposed at the second side of the molded substrate. A first RDL may have a plurality of mounting pads and a plurality of conductive lines is formed on the molded substrate, the mounting pads may have a bond pitch greater than the bond pitch of the die contact pads.

公开(公告)号：US09799620B2

公开(公告)日：2017-10-24

申请号：US14788304

申请日：2015-06-30

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Yu-Chih Huang ,  Yen-Chang Hu ,  Ching-Wen Hsiao ,  Chen-Shien Chen

IPC分类号： H01L23/00 ,  H01L23/498 ,  H01L21/48 ,  H01L23/538 ,  H01L21/56

CPC分类号： H01L24/11 ,  H01L21/486 ,  H01L21/563 ,  H01L23/49816 ,  H01L23/49822 ,  H01L23/49827 ,  H01L23/5389 ,  H01L24/19 ,  H01L2224/02317 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/73267 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/18162 ,  H01L2924/00

摘要： A method of forming a die package includes forming a conductive column over a first side of a carrier, attaching a semiconductor die to the first side of the carrier, and forming a molding compound over the first side of the carrier. The semiconductor die and the conductive column are embedded in the molding compound. A second side of the carrier opposite the first side is under a compressive stress. The method also includes forming a first compressive dielectric layer over the semiconductor die, the conductive column, and the molding compound, forming a first redistribution layer (RDL) over the first compressive dielectric layer, and forming a first passivation layer over the first RDL.

公开(公告)号：US10177073B2

公开(公告)日：2019-01-08

申请号：US15641116

申请日：2017-07-03

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Wei Sen Chang ,  Tsung-Hsien Chiang ,  Yen-Chang Hu ,  Ching-Wen Hsiao

IPC分类号： H01L21/56 ,  H01L23/00 ,  H01L23/433 ,  H01L23/498 ,  H01L23/538

摘要： Disclosed herein are a device having an embedded heat spreader and method for forming the same. A carrier substrate may comprise a carrier, an adhesive layer, a base film layer, and a seed layer. A patterned mask is formed with a heat spreader opening and via openings. Vias and a heat spreader may be formed in the pattern mask openings at the same time using a plating process and a die attached to the head spreader by a die attachment layer. A molding compound is applied over the die and heat spreader so that the heat spreader is disposed at the second side of the molded substrate. A first RDL may have a plurality of mounting pads and a plurality of conductive lines is formed on the molded substrate, the mounting pads may have a bond pitch greater than the bond pitch of the die contact pads.

公开(公告)号：US20170301608A1

公开(公告)日：2017-10-19

申请号：US15641116

申请日：2017-07-03

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Wei Sen Chang ,  Tsung-Hsien Chiang ,  Yen-Chang Hu ,  Ching-Wen Hsiao

IPC分类号： H01L23/433 ,  H01L23/498 ,  H01L23/538 ,  H01L23/00 ,  H01L21/56

CPC分类号： H01L23/4334 ,  H01L21/568 ,  H01L23/49816 ,  H01L23/49827 ,  H01L23/5389 ,  H01L24/16 ,  H01L24/20 ,  H01L24/73 ,  H01L24/83 ,  H01L2224/12105 ,  H01L2224/19 ,  H01L2224/29139 ,  H01L2224/32245 ,  H01L2224/73267 ,  H01L2224/83005 ,  H01L2224/92244 ,  H01L2924/00 ,  H01L2924/181 ,  H01L2924/00014

摘要： Disclosed herein are a device having an embedded heat spreader and method for forming the same. A carrier substrate may comprise a carrier, an adhesive layer, a base film layer, and a seed layer. A patterned mask is formed with a heat spreader opening and via openings. Vias and a heat spreader may be formed in the pattern mask openings at the same time using a plating process and a die attached to the head spreader by a die attachment layer. A molding compound is applied over the die and heat spreader so that the heat spreader is disposed at the second side of the molded substrate. A first RDL may have a plurality of mounting pads and a plurality of conductive lines is formed on the molded substrate, the mounting pads may have a bond pitch greater than the bond pitch of the die contact pads.

公开(公告)号：US20150072476A1

公开(公告)日：2015-03-12

申请号：US14546777

申请日：2014-11-18

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Yen-Chang Hu ,  Chen-Shien Chen ,  Tin-Hao Kuo ,  Chih-Hua Chen ,  Ching-Wen Hsiao

IPC分类号： H01L25/00 ,  H01L23/00

CPC分类号： H01L25/50 ,  H01L23/49816 ,  H01L23/5389 ,  H01L24/11 ,  H01L24/19 ,  H01L24/20 ,  H01L24/81 ,  H01L25/0657 ,  H01L25/105 ,  H01L2224/0231 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/11002 ,  H01L2224/11003 ,  H01L2224/1134 ,  H01L2224/12105 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/73267 ,  H01L2225/06541 ,  H01L2225/06565 ,  H01L2225/1035 ,  H01L2225/1058 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01047 ,  H01L2924/01322 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  Y02P80/30 ,  H01L2924/00 ,  H01L2224/48 ,  H01L2224/81805

摘要： Methods and apparatus for package on package structures having stud bump through via interconnections. A structure includes an interconnect layer having a plurality of through via assemblies each including at least one stud bump are formed on conductive pads; and encapsulant surrounding the through via assembly, a first redistribution layer formed over a surface of the encapsulant and coupled to the through via assemblies and carrying connectors, and a second redistribution layer over interconnect layer at the other end of the through via assemblies, the through via assemblies extending vertically through the interconnect layer. In an embodiment the interconnect layer is mounted using the connectors to a lower package substrate to form a package on package structure. A first integrated circuit device may be mounted on the second redistribution layer of the interconnect layer. Methods for forming the interconnect layer and the package on package structures are disclosed.

摘要翻译： 封装结构上的封装结构的方法和装置，其具有穿过通孔互连的凸块凸块。 一种结构包括具有多个通孔组件的互连层，每个穿孔组件包括至少一个柱形突起，其在导电垫上形成; 以及围绕所述通孔组件的密封剂，形成在所述密封剂的表面上并且连接到所述通孔组件和承载连接器的第一再分布层，以及在所述通孔组件的另一端处的互连层上的第二再分布层， 通过组件垂直延伸穿过互连层。 在一个实施例中，使用连接器将互连层安装到下封装衬底以形成封装结构上的封装。 第一集成电路器件可以安装在互连层的第二再分配层上。 公开了在封装结构上形成互连层和封装的方法。

公开(公告)号：US20190148264A1

公开(公告)日：2019-05-16

申请号：US16231783

申请日：2018-12-24

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Wei Sen Chang ,  Tsung-Hsien Chiang ,  Yen-Chang Hu ,  Ching-Wen Hsiao

IPC分类号： H01L23/433 ,  H01L23/538 ,  H01L23/00 ,  H01L23/498

摘要： Disclosed herein is a device having an embedded heat spreader and method for forming the same. A carrier substrate may comprise a carrier, an adhesive layer, a base film layer, and a seed layer. A patterned mask is formed with a heat spreader opening and via openings. Vias and a heat spreader may be formed in the pattern mask openings at the same time using a plating process and a die attached to the head spreader by a die attachment layer. A molding compound is applied over the die and heat spreader so that the heat spreader is disposed at the second side of the molded substrate. A first RDL may have a plurality of mounting pads and a plurality of conductive lines is formed on the molded substrate, the mounting pads may have a bond pitch greater than the bond pitch of the die contact pads.

公开(公告)号：US10157884B2

公开(公告)日：2018-12-18

申请号：US15191838

申请日：2016-06-24

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Chen-Hua Yu ,  Chen-Shien Chen ,  Yen-Chang Hu

IPC分类号： H01L21/00 ,  H01L25/065 ,  H01L23/00 ,  H01L25/00 ,  H01L21/56 ,  H01L23/31

摘要： A package includes package includes a first package component including a first plurality of electrical connectors at a top surface of the first package component, and a second plurality of electrical connectors longer than the first plurality of electrical connectors at the top surface of the first package component. A first device die is over the first package component and bonded to the first plurality of electrical connectors. A second package component is overlying the first package component and the first device die. The second package component includes a third plurality of electrical connectors at a bottom surface of the second package component. The third plurality of electrical connectors is bonded to the second plurality of electrical connectors. A fourth plurality of electrical connectors is at a bottom surface of the second package. The second and the fourth plurality of electrical connectors comprise non-solder metallic materials.