Invention Grant
- Patent Title: Methods of forming variable-depth device structures
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Application No.: US15931333Application Date: 2020-05-13
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Publication No.: US11112694B2Publication Date: 2021-09-07
- Inventor: Andre P. LaBonte , Ludovic Godet , Rutger Meyer Timmerman Thijssen
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson + Sheridan, LLP
- Main IPC: G03F7/00
- IPC: G03F7/00 ; G03F7/20 ; H01L21/3065 ; H01L21/311 ; H01L21/302 ; G02B5/18 ; G02B27/01
Abstract:
A method for forming a device structure is disclosed. The method of forming the device structure includes forming a variable-depth structure in a device material layer using cyclic-etch process techniques. A plurality of device structures is formed in the variable-depth structure to define vertical or slanted device structures therein. The variable-depth structure and the vertical or slanted device structures are formed using an etch process.
Information query
