公开(公告)号：US11112694B2

公开(公告)日：2021-09-07

申请号：US15931333

申请日：2020-05-13

Applicant: Applied Materials, Inc.

Inventor： Andre P. LaBonte ,  Ludovic Godet ,  Rutger Meyer Timmerman Thijssen

IPC: G03F7/00 ,  G03F7/20 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/302 ,  G02B5/18 ,  G02B27/01

Abstract: A method for forming a device structure is disclosed. The method of forming the device structure includes forming a variable-depth structure in a device material layer using cyclic-etch process techniques. A plurality of device structures is formed in the variable-depth structure to define vertical or slanted device structures therein. The variable-depth structure and the vertical or slanted device structures are formed using an etch process.