Invention Grant
- Patent Title: Focus and overlay improvement by modifying a patterning device
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Application No.: US16099452Application Date: 2017-05-17
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Publication No.: US11126093B2Publication Date: 2021-09-21
- Inventor: Richard Johannes Franciscus Van Haren , Reiner Maria Jungblut , Leon Paul Van Dijk , Willem Seine Christian Roelofs , Wim Tjibbo Tel , Stefan Hunsche , Maurits Van Der Schaar
- Applicant: ASML NETHERLANDS B.V.
- Applicant Address: NL Veldhoven
- Assignee: ASML NETHERLANDS B.V.
- Current Assignee: ASML NETHERLANDS B.V.
- Current Assignee Address: NL Veldhoven
- Agency: Pillsbury Winthrop Shaw Pittman LLP
- International Application: PCT/EP2017/061854 WO 20170517
- International Announcement: WO2017/202665 WO 20171130
- Main IPC: G03F7/20
- IPC: G03F7/20 ; G03F1/36 ; G03F9/00
Abstract:
A method is proposed involving obtaining data regarding an expected focus offset during a patterning process due to topography of a region of a substrate surface. A modification of, e.g., a transmission or reflection of a region of a patterning device associated with the region of the substrate surface is determined based on the data. Using the patterning device modified according the determined modification during the patterning process mitigates an impact of the substrate topography on a parameter of the patterning process.
Public/Granted literature
- US20200310242A1 FOCUS AND OVERLAY IMPROVEMENT BY MODIFYING A PATTERNING DEVICE Public/Granted day:2020-10-01
Information query
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