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1.发明授权公开(公告)号：US11385550B2
公开(公告)日：2022-07-12
申请号：US16864456
申请日：2020-05-01
Applicant: ASML Netherlands B.V.
Inventor： Alexander Ypma , Jasper Menger , David Deckers , David Han , Adrianus Cornelis Matheus Koopman , Irina Lyulina , Scott Anderson Middlebrooks , Richard Johannes Franciscus Van Haren , Jochem Sebastiaan Wildenberg
Abstract: In a lithographic process, product units such as semiconductor wafers are subjected to lithographic patterning operations and chemical and physical processing operations. Alignment data or other measurements are made at stages during the performance of the process to obtain object data representing positional deviation or other parameters measured at points spatially distributed across each unit. This object data is used to obtain diagnostic information by performing a multivariate analysis to decompose a set of vectors representing the units in the multidimensional space into one or more component vectors. Diagnostic information about the industrial process is extracted using the component vectors. The performance of the industrial process for subsequent product units can be controlled based on the extracted diagnostic information.
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公开(公告)号：US11054813B2
公开(公告)日：2021-07-06
申请号：US15763834
申请日：2016-09-21
Applicant: ASML NETHERLANDS B.V.
Inventor： Alexander Ypma , David Frans Simon Deckers , Franciscus Godefridus Casper Bijnen , Richard Johannes Franciscus Van Haren , Weitian Kou
IPC: G05B19/418 , G03F7/20 , G03F9/00
Abstract: In a lithographic process in which a series of substrates are processed in different contexts, object data (such as performance data representing overlay measured on a set of substrates that have been processed previously) is received. Context data represents one or more parameters of the lithographic process that vary between substrates within the set. By principal component analysis or other statistical analysis of the performance data, the set of substrates are partitioned into two or more subsets. The first partitioning of the substrates and the context data are used to identify one or more relevant context parameters, being parameters of the lithographic process that are observed to correlate most strongly with the first partitioning. The lithographic apparatus is controlled for new substrates by reference to the identified relevant context parameters. Embodiments with feedback control and feedforward control are described.
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公开(公告)号：US10691863B2
公开(公告)日：2020-06-23
申请号：US15769539
申请日：2016-09-26
Applicant: ASML NETHERLANDS B.V.
Inventor： Peter Ten Berge , Everhardus Cornelis Mos , Richard Johannes Franciscus Van Haren , Peter Hanzen Wardenier , Erik Jensen
IPC: G06F30/398 , G03F1/70 , G03F1/72 , G06F111/10
Abstract: A method including modeling high resolution patterning error information of a patterning process involving a patterning device in a patterning system using an error mathematical model, modeling a correction of the patterning error that can be made by a patterning device modification tool using a correction mathematical model, the correction mathematical model having substantially the same resolution as the error mathematical model, and determining modification information for modifying the patterning device using the patterning device modification tool by applying the correction mathematical model to the patterning error information modeled by the error mathematical model.
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公开(公告)号：US10545410B2
公开(公告)日：2020-01-28
申请号：US16076743
申请日：2017-02-07
Applicant: ASML NETHERLANDS B.V.
Inventor： Hakki Ergun Cekli , Masashi Ishibashi , Leon Paul Van Dijk , Richard Johannes Franciscus Van Haren , Xing Lan Liu , Reiner Maria Jungblut , Cedric Marc Affentauschegg , Ronald Henricus Johannes Otten
Abstract: A lithographic process includes clamping a substrate onto a substrate support, measuring positions across the clamped substrate, and applying a pattern to the clamped substrate using the positions measured. A correction is applied to the positioning of the applied pattern in localized regions of the substrate, based on recognition of a warp-induced characteristic in the positions measured across the substrate. The correction may be generated by inferring one or more shape characteristics of the warped substrate using the measured positions and other information. Based on the one or more inferred shape characteristics, a clamping model is applied to simulate deformation of the warped substrate in response to clamping. A correction is calculated based on the simulated deformation.
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公开(公告)号：US10331043B2
公开(公告)日：2019-06-25
申请号：US15118440
申请日：2015-01-29
Applicant: ASML Netherlands B.V.
Inventor： Henricus Wilhelmus Maria Van Buel , Johannes Marcus Maria Beltman , Xing Lan Liu , Hendrik Jan Hidde Smilde , Richard Johannes Franciscus Van Haren
IPC: G03F7/20 , G01N21/93 , G01N21/956
Abstract: A method of devising a target arrangement, and associated target and reticle. The target includes a plurality of gratings, each grating having a plurality of substructures. The method includes: defining a target area; locating the substructures within the target area so as to form the gratings; and locating assist features at the periphery of the gratings, the assist features being configured to reduce measured intensity peaks at the periphery of the gratings. The method may include an optimization process including modelling a resultant image obtained by inspection of the target using a metrology process; and evaluating whether the target arrangement is optimized for detection using a metrology process.
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Patent Agency Ranking
公开(公告)号：US09291916B2
公开(公告)日：2016-03-22
申请号：US14613687
申请日：2015-02-04
Applicant: ASML Netherlands B.V.
Inventor： Stefan Cornelis Theodorus Van Der Sanden , Richard Johannes Franciscus Van Haren , Hubertus Johannes Gertrudus Simons , Remi Daniel Marie Edart , Xiuhong Wei , Irina Lyulina , Michael Kubis
CPC classification number: G03F7/70616 , G03F7/70141 , G03F7/70633 , G03F9/7003 , G03F9/7088
Abstract: A substrate is loaded onto a substrate support of a lithographic apparatus, after which the apparatus measures locations of substrate alignment marks. These measurements define first correction information allowing the apparatus to apply a pattern at one or more desired locations on the substrate. Additional second correction information is used to enhance accuracy of pattern positioning, in particular to correct higher order distortions of a nominal alignment grid. The second correction information may be based on measurements of locations of alignment marks made when applying a previous pattern to the same substrate. The second correction information may alternatively or in addition be based on measurements made on similar substrates that have been patterned prior to the current substrate.
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公开(公告)号：US12189308B2
公开(公告)日：2025-01-07
申请号：US18129169
申请日：2023-03-31
Applicant: ASML NETHERLANDS B.V.
Inventor： Richard Johannes Franciscus Van Haren , Leon Paul Van Dijk , Oktay Yildirim , Orion Jonathan Pierre Mouraille
Abstract: A method for determining a target feature in a model of a patterning process based on local electric fields estimated for the patterning process. The method includes obtaining a mask stack region of interest. The mask stack region of interest has one or more characteristics associated with propagation of electromagnetic waves through the mask stack region of interest. The mask stack region of interest includes the target feature. The method includes estimating a local electric field based on the one or more characteristics associated with the propagation of electromagnetic waves through the mask stack region of interest. The local electric field is estimated for a portion of the mask stack region of interest in proximity to the target feature. The method includes determining the target feature based on the estimated local electric field.
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8.发明授权公开(公告)号：US11940740B2
公开(公告)日：2024-03-26
申请号：US17836099
申请日：2022-06-09
Applicant: ASML Netherlands B.V.
Inventor： Alexander Ypma , Jasper Menger , David Deckers , David Han , Adrianus Cornelis Matheus Koopman , Irina Lyulina , Scott Anderson Middlebrooks , Richard Johannes Franciscus Van Haren , Jochem Sebastiaan Wildenberg
CPC classification number: G03F7/706837 , G03F7/70525 , G03F7/70616 , G03F9/7092 , G06F16/26
Abstract: In a lithographic process, product units such as semiconductor wafers are subjected to lithographic patterning operations and chemical and physical processing operations. Alignment data or other measurements are made at stages during the performance of the process to obtain object data representing positional deviation or other parameters measured at points spatially distributed across each unit. This object data is used to obtain diagnostic information by performing a multivariate analysis to decompose a set of vectors representing the units in the multidimensional space into one or more component vectors. Diagnostic information about the industrial process is extracted using the component vectors. The performance of the industrial process for subsequent product units can be controlled based on the extracted diagnostic information.
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公开(公告)号：US10788761B2
公开(公告)日：2020-09-29
申请号：US16344831
申请日：2017-10-17
Applicant: ASML NETHERLANDS B.V.
Inventor： Leon Paul Van Dijk , Victor Emanuel Calado , Xing Lan Liu , Richard Johannes Franciscus Van Haren
Abstract: A method of determining an optimal operational parameter setting of a metrology system is described. Free-form substrate shape measurements are performed. A model is applied, transforming the measured warp to modeled warp scaling values. Substrates are clamped to a chuck, causing substrate deformation. Alignment marks of the substrates are measured using an alignment system with four alignment measurement colors. Scaling values thus obtained are corrected with the modeled warp scaling values to determine corrected scaling values. An optimal alignment measurement color is determined, based on the corrected scaling values. Optionally, scaling values are selected that were measured using the optimal alignment measurement color and a substrate grid is determined using the selected scaling values. A substrate may be exposed using the determined substrate grid to correct exposure of the substrate.
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公开(公告)号：US10386176B2
公开(公告)日：2019-08-20
申请号：US14835504
申请日：2015-08-25
Applicant: ASML NETHERLANDS B.V.
Inventor： Kaustuve Bhattacharyya , Henricus Wilhelmus Maria Van Buel , Christophe David Fouquet , Hendrik Jan Hidde Smilde , Maurits Van Der Schaar , Arie Jeffrey Den Boef , Richard Johannes Franciscus Van Haren , Xing Lan Liu , Johannes Marcus Maria Beltman , Andreas Fuchs , Omer Abubaker Omer Adam , Michael Kubis , Martin Jacobus Johan Jak
Abstract: A diffraction measurement target that has at least a first sub-target and at least a second sub-target, and wherein (1) the first and second sub-targets each include a pair of periodic structures and the first sub-target has a different design than the second sub-target, the different design including the first sub-target periodic structures having a different pitch, feature width, space width, and/or segmentation than the second sub-target periodic structure or (2) the first and second sub-targets respectively include a first and second periodic structure in a first layer, and a third periodic structure is located at least partly underneath the first periodic structure in a second layer under the first layer and there being no periodic structure underneath the second periodic structure in the second layer, and a fourth periodic structure is located at least partly underneath the second periodic structure in a third layer under the second layer.
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