- 专利标题： Method of topology-selective film formation of silicon oxide
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申请号： US16752514申请日： 2020-01-24
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公开(公告)号： US11127589B2公开(公告)日： 2021-09-21
- 发明人: Masaru Zaitsu , Atsuki Fukazawa
- 申请人： ASM IP Holding B.V.
- 申请人地址： NL Almere
- 专利权人： ASM IP Holding B.V.
- 当前专利权人： ASM IP Holding B.V.
- 当前专利权人地址： NL Almere
- 代理机构： Snell & Wilmer L.L.P.
- 主分类号： H01L21/02
- IPC分类号： H01L21/02 ; H01L21/311
摘要：
A method for forming a dielectric film containing a Si—O bond a trench formed in an upper surface of a substrate, includes: designing a topology of a final dielectric film containing a Si—O bond formed in the trench by preselecting a target portion to be selectively removed relative to a non-target portion of an initial dielectric film resulting in the final dielectric film; conformally depositing the initial dielectric film on the upper surface and in the trench; and relatively increasing an amount of impurities contained in the target portion of the initial dielectric film relative to an amount of impurities contained in the non-target portion of the initial dielectric film to obtain a treated dielectric film, thereby giving the target portion and the non-target portion different chemical resistance properties when subjected to etching.
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