公开(公告)号：US11637011B2

公开(公告)日：2023-04-25

申请号：US17068495

申请日：2020-10-12

Applicant: ASM IP Holding B.V.

Inventor： Atsuki Fukazawa ,  Masaru Zaitsu ,  Pei-Chia Chen

IPC: H01L21/02 ,  C23C16/56 ,  H01L21/311 ,  C23C16/34 ,  C23C16/455

Abstract: A method for forming a silicon oxide film on a step formed on a substrate includes: (a) designing a topology of a final silicon oxide film by preselecting a target portion of an initial silicon nitride film to be selectively deposited or removed or reformed with reference to a non-target portion of the initial silicon nitride film resulting in the final silicon oxide film; and (b) forming the initial silicon nitride film and the final silicon oxide film on the surfaces of the step according to the topology designed in process (a), wherein the initial silicon nitride film is deposited by ALD using a silicon-containing precursor containing halogen, and the initial silicon nitride film is converted to the final silicon oxide film by oxidizing the initial silicon nitride film without further depositing a film wherein a Si—N bond in the initial silicon nitride film is converted to a Si—O bond.

公开(公告)号：US20180119283A1

公开(公告)日：2018-05-03

申请号：US15340512

申请日：2016-11-01

Applicant: ASM IP Holding B.V.

Inventor： Atsuki Fukazawa ,  Masaru Zaitsu ,  Masaki Tokunaga ,  Hideaki Fukuda

IPC: C23C16/505 ,  C23C16/455 ,  C23C16/52 ,  C23C16/44 ,  C23C16/32 ,  C23C16/40 ,  C23C16/34

CPC classification number: C23C16/505 ,  C23C16/045 ,  C23C16/32 ,  C23C16/325 ,  C23C16/34 ,  C23C16/345 ,  C23C16/40 ,  C23C16/401 ,  C23C16/4412 ,  C23C16/45527 ,  C23C16/45542 ,  C23C16/509 ,  C23C16/52

Abstract: A method for depositing a film by plasma-enhanced subatmospheric-pressure atomic layer deposition (subatmospheric PEALD) is conducted using capacitively coupled parallel plate electrodes with a gap of 1 mm to 5 mm, wherein one cycle of subatmospheric PEALD includes: supplying a precursor in a pulse to the reaction chamber; continuously supplying a reactant to the reaction chamber; continuously supplying an inert gas to the reaction chamber; continuously controlling a pressure of the reaction chamber in a range of 15 kPa to 80 kPa; and applying RF power for glow discharge in a pulse to one of the parallel plate electrodes.

公开(公告)号：US10283353B2

公开(公告)日：2019-05-07

申请号：US15472750

申请日：2017-03-29

Applicant: ASM IP Holding B.V. ,  National University Corporation Nagoya University

Inventor： Akiko Kobayashi ,  Masaru Zaitsu ,  Nobuyoshi Kobayashi ,  Masaru Hori

IPC: H01L21/3105 ,  H01L21/02 ,  H01L21/033

Abstract: A method of reforming an insulating film deposited on a substrate having a recess pattern constituted by a bottom and sidewalls, includes: providing the film deposited on the substrate having the recess pattern in an evacuatable reaction chamber, wherein a property of a portion of the film deposited on the sidewalls is inferior to that of a portion of the film deposited on a top surface of the substrate; adjusting a pressure of an atmosphere of the reaction chamber to 10 Pa or less, which atmosphere is constituted by H2 and/or He without a precursor and without a reactant; and applying RF power to the atmosphere of the pressure-adjusted reaction chamber to generate a plasma to which the film is exposed, thereby reforming the portion of the film deposited on the sidewalls to improve the property of the sidewall portion of the film.

公开(公告)号：US20180350620A1

公开(公告)日：2018-12-06

申请号：US15987755

申请日：2018-05-23

Applicant: ASM IP Holding B.V.

Inventor： Masaru Zaitsu ,  Nobuyoshi Kobayashi ,  Akiko Kobayashi ,  Masaru Hori ,  Takayoshi Tsutsumi

IPC: H01L21/311 ,  H01L21/3213 ,  H01L21/02

Abstract: A method for etching a target layer on a substrate by a dry etching process includes at least one etching cycle, wherein an etching cycle includes: depositing a carbon halide film using reactive species on the target layer on the substrate; and etching the carbon halide film using a plasma of a non-halogen hydrogen-containing etching gas, which plasma alone does not substantially etch the target layer, thereby generating a hydrogen halide as etchant species at a boundary region of the carbon halide film and the target layer, thereby etching a portion of the target layer in the boundary region.

公开(公告)号：US09793135B1

公开(公告)日：2017-10-17

申请号：US15210256

申请日：2016-07-14

Applicant: ASM IP Holding B.V. ,  National University Corporation Nagoya University

Inventor： Masaru Zaitsu ,  Nobuyoshi Kobayashi ,  Akiko Kobayashi ,  Masaru Hori ,  Hiroki Kondo ,  Takayoshi Tsutsumi

IPC: H01L21/311 ,  H01L21/02

CPC classification number: H01L21/31116 ,  H01L21/02118 ,  H01L21/0212 ,  H01L21/02274

Abstract: A method for etching a target layer on a substrate by a dry etching process includes at least one etching cycle, wherein an etching cycle includes: depositing a halogen-containing film using reactive species on the target layer on the substrate; and etching the halogen-containing film using a plasma of a non-halogen etching gas, which plasma alone does not substantially etch the target layer, to generate etchant species at a boundary region of the halogen-containing film and the target layer, thereby etching a portion of the target layer in the boundary region.

公开(公告)号：US11127589B2

公开(公告)日：2021-09-21

申请号：US16752514

申请日：2020-01-24

Applicant: ASM IP Holding B.V.

Inventor： Masaru Zaitsu ,  Atsuki Fukazawa

IPC: H01L21/02 ,  H01L21/311

Abstract: A method for forming a dielectric film containing a Si—O bond a trench formed in an upper surface of a substrate, includes: designing a topology of a final dielectric film containing a Si—O bond formed in the trench by preselecting a target portion to be selectively removed relative to a non-target portion of an initial dielectric film resulting in the final dielectric film; conformally depositing the initial dielectric film on the upper surface and in the trench; and relatively increasing an amount of impurities contained in the target portion of the initial dielectric film relative to an amount of impurities contained in the non-target portion of the initial dielectric film to obtain a treated dielectric film, thereby giving the target portion and the non-target portion different chemical resistance properties when subjected to etching.

公开(公告)号：US10435790B2

公开(公告)日：2019-10-08

申请号：US15340512

申请日：2016-11-01

Applicant: ASM IP Holding B.V.

Inventor： Atsuki Fukazawa ,  Masaru Zaitsu ,  Masaki Tokunaga ,  Hideaki Fukuda

IPC: C23C16/505 ,  C23C16/32 ,  C23C16/34 ,  C23C16/40 ,  C23C16/44 ,  C23C16/455 ,  C23C16/509 ,  C23C16/52 ,  C23C16/04

Abstract: A method for depositing a film by plasma-enhanced subatmospheric-pressure atomic layer deposition (subatmospheric PEALD) is conducted using capacitively coupled parallel plate electrodes with a gap of 1 mm to 5 mm, wherein one cycle of subatmospheric PEALD includes: supplying a precursor in a pulse to the reaction chamber; continuously supplying a reactant to the reaction chamber; continuously supplying an inert gas to the reaction chamber; continuously controlling a pressure of the reaction chamber in a range of 15 kPa to 80 kPa; and applying RF power for glow discharge in a pulse to one of the parallel plate electrodes.

公开(公告)号：US20170186621A1

公开(公告)日：2017-06-29

申请号：US14981468

申请日：2015-12-28

Applicant: ASM IP Holding B.V.

Inventor： Masaru Zaitsu

IPC: H01L21/311 ,  H01L21/02

CPC classification number: H01L21/31116 ,  H01J37/32146 ,  H01L21/0228 ,  H01L21/3065 ,  H01L21/31122 ,  H01L21/32136 ,  H01L21/32137 ,  H01L21/67069

Abstract: A method of atomic layer etching (ALE) uses a cycle including: continuously providing a noble gas; providing a pulse of an etchant gas to the reaction space to chemisorb the etchant gas in an unexcited state in a self-limiting manner on a surface of a substrate in the reaction space; and providing a pulse of a reactive species of a noble gas in the reaction space to contact the etchant gas-chemisorbed surface of the substrate with the reactive species so that the layer on the substrate is etched. The etchant gas is a fluorocarbon gas containing a functional group with a polarity.

公开(公告)号：US09627221B1

公开(公告)日：2017-04-18

申请号：US14981434

申请日：2015-12-28

Applicant: ASM IP Holding B.V.

Inventor： Masaru Zaitsu ,  Atsuki Fukazawa ,  Hideaki Fukuda

IPC: H01L21/311 ,  H01L21/02

CPC classification number: H01L21/31116 ,  C23C16/045 ,  C23C16/45534 ,  C23C16/4554 ,  H01J37/32091 ,  H01J2237/334 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228

Abstract: A method of continuous fabrication of a layered structure on a substrate having a patterned recess, includes: (i) forming a dielectric layer on a substrate having a patterned recess in a reaction chamber by PEALD using a first RF power; (ii) continuously after completion of step (i) without breaking vacuum, etching the dielectric layer on the substrate in the reaction chamber by PEALE using a second RF power, wherein a pressure of the reaction chamber is controlled at 30 Pa to 1,333 Pa throughout steps (i) and (ii); a noble gas is supplied to the reaction chamber continuously throughout steps (i) and (ii); and the second RF power is higher than the first RF power.

公开(公告)号：US20210118667A1

公开(公告)日：2021-04-22

申请号：US17068495

申请日：2020-10-12

Applicant: ASM IP Holding B.V.

Inventor： Atsuki Fukazawa ,  Masaru Zaitsu ,  Pei-Chia Chen

IPC: H01L21/02 ,  H01L21/311 ,  C23C16/34 ,  C23C16/455 ,  C23C16/56

Abstract: A method for forming a silicon oxide film on a step formed on a substrate includes: (a) designing a topology of a final silicon oxide film by preselecting a target portion of an initial silicon nitride film to be selectively deposited or removed or reformed with reference to a non-target portion of the initial silicon nitride film resulting in the final silicon oxide film; and (b) forming the initial silicon nitride film and the final silicon oxide film on the surfaces of the step according to the topology designed in process (a), wherein the initial silicon nitride film is deposited by ALD using a silicon-containing precursor containing halogen, and the initial silicon nitride film is converted to the final silicon oxide film by oxidizing the initial silicon nitride film without further depositing a film wherein a Si—N bond in the initial silicon nitride film is converted to a Si—O bond.