Invention Grant
- Patent Title: Method of topology-selective film formation of silicon oxide
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Application No.: US16752514Application Date: 2020-01-24
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Publication No.: US11127589B2Publication Date: 2021-09-21
- Inventor: Masaru Zaitsu , Atsuki Fukazawa
- Applicant: ASM IP Holding B.V.
- Applicant Address: NL Almere
- Assignee: ASM IP Holding B.V.
- Current Assignee: ASM IP Holding B.V.
- Current Assignee Address: NL Almere
- Agency: Snell & Wilmer L.L.P.
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/311

Abstract:
A method for forming a dielectric film containing a Si—O bond a trench formed in an upper surface of a substrate, includes: designing a topology of a final dielectric film containing a Si—O bond formed in the trench by preselecting a target portion to be selectively removed relative to a non-target portion of an initial dielectric film resulting in the final dielectric film; conformally depositing the initial dielectric film on the upper surface and in the trench; and relatively increasing an amount of impurities contained in the target portion of the initial dielectric film relative to an amount of impurities contained in the non-target portion of the initial dielectric film to obtain a treated dielectric film, thereby giving the target portion and the non-target portion different chemical resistance properties when subjected to etching.
Public/Granted literature
- US20200251328A1 METHOD OF TOPOLOGY-SELECTIVE FILM FORMATION OF SILICON OXIDE Public/Granted day:2020-08-06
Information query
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