- 专利标题： Semiconductor device package including thermal dissipation element and method of manufacturing the same
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申请号： US16799751申请日： 2020-02-24
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公开(公告)号： US11127650B2公开(公告)日： 2021-09-21
- 发明人: Chien Lin Chang Chien , Chiu-Wen Lee , Hung-Jung Tu , Chang Chi Lee , Chin-Li Kao
- 申请人： Advanced Semiconductor Engineering, Inc.
- 申请人地址： TW Kaohsiung
- 专利权人： Advanced Semiconductor Engineering, Inc.
- 当前专利权人： Advanced Semiconductor Engineering, Inc.
- 当前专利权人地址： TW Kaohsiung
- 代理机构： Foley & Lardner LLP
- 主分类号： H01L23/36
- IPC分类号： H01L23/36 ; H01L21/48 ; H01L23/48 ; H01L23/367 ; H01L23/00
摘要：
The present disclosure provides a semiconductor device package. The semiconductor device package includes a first die, a second die, and a thermal dissipation element. The first die has a first surface. The second die is disposed on the first surface. The thermal dissipation element is disposed on the first surface. The thermal dissipation element includes a first portion extending in a first direction substantially parallel to the first surface and partially covered by the second die and a second portion extending in a second direction substantially perpendicular to the first surface to be adjacent to an edge of the second die.
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