Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
-
Application No.: US16508219Application Date: 2019-07-10
-
Publication No.: US11127697B2Publication Date: 2021-09-21
- Inventor: Wen Hung Huang , Yan Wen Chung , Wei Chu Sun
- Applicant: Advanced Semiconductor Engineering, Inc.
- Applicant Address: TW Kaohsiung
- Assignee: Advanced Semiconductor Engineering, Inc.
- Current Assignee: Advanced Semiconductor Engineering, Inc.
- Current Assignee Address: TW Kaohsiung
- Agency: Foley & Lardner LLP
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L29/40 ; H01L23/66 ; H01L23/498 ; H01L23/00
Abstract:
A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes an antenna zone and a routing zone. The routing zone is disposed on the antenna zone, where the antenna zone includes a first insulation layer and two or more second insulation layer and a thickness of the first insulation layer is different from that of the second insulation layer.
Public/Granted literature
- US20210013163A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2021-01-14
Information query
IPC分类:
