Invention Grant
- Patent Title: High bandwidth memories and systems including the same
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Application No.: US16926189Application Date: 2020-07-10
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Publication No.: US11127713B2Publication Date: 2021-09-21
- Inventor: Youngcheon Kwon , Kyomin Sohn , Jaeyoun Youn
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Myers Bigel, P.A.
- Priority: KR10-2019-0171443 20191220
- Main IPC: H01L25/065
- IPC: H01L25/065 ; H01L23/538 ; H01L21/66

Abstract:
High bandwidth memories and systems including the same may include a buffer die, a plurality of memory dies stacked on the buffer die, a plurality of dummy bump groups in edge regions of the buffer die and the plurality of memory dies, and a plurality of signal line groups. Each of the plurality of dummy bump groups includes dummy bumps spaced apart from each other between each pair of adjacent dies and configured to connect the two adjacent dies to each other. Each of the signal line groups includes a plurality of signal lines configured to transmit a corresponding signal among an input signal and a plurality of bump crack detection signals applied to an input dummy bump of each of the plurality of dummy bump groups via sequential transmission through the plurality of dummy bumps to an output dummy bump during a bump crack test operation.
Public/Granted literature
- US20210193615A1 HIGH BANDWIDTH MEMORIES AND SYSTEMS INCLUDING THE SAME Public/Granted day:2021-06-24
Information query
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