Invention Grant
- Patent Title: Devices, methods of forming a device, and memory devices
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Application No.: US16906718Application Date: 2020-06-19
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Publication No.: US11127745B2Publication Date: 2021-09-21
- Inventor: Kentaro Ishii , Yongjun J. Hu , Amirhasan Nourbakhsh , Durai Vishak Nirmal Ramaswamy , Christopher W. Petz , Luca Fumagalli
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: TraskBritt
- Main IPC: H01L27/108
- IPC: H01L27/108
Abstract:
A method of forming an apparatus comprises forming a first metal nitride material over an upper surface of a conductive material within an opening extending through at least one dielectric material through a non-conformal deposition process. A second metal nitride material is formed over an upper surface of the first metal nitride material and side surfaces of the at least one dielectric material partially defining boundaries of the opening through a conformal deposition process. A conductive structure is formed over surfaces of the second metal nitride material within the opening. Apparatuses and electronic systems are also described.
Public/Granted literature
- US20200321340A1 DEVICES, METHODS OF FORMING A DEVICE, AND MEMORY DEVICES Public/Granted day:2020-10-08
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