公开(公告)号：US20200212046A1

公开(公告)日：2020-07-02

申请号：US16235957

申请日：2018-12-28

Applicant: Micron Technology, Inc.

Inventor： Kentaro Ishii ,  Yongjun J. Hu ,  Amirhasan Nourbakhsh ,  Durai Vishak Nirmal Ramaswamy ,  Christopher W. Petz ,  Luca Fumagalli

IPC: H01L27/108

Abstract: A method of forming an apparatus comprises forming a first metal nitride material over an upper surface of a conductive material within an opening extending through at least one dielectric material through a non-conformal deposition process. A second metal nitride material is formed over an upper surface of the first metal nitride material and side surfaces of the at least one dielectric material partially defining boundaries of the opening through a conformal deposition process. A conductive structure is formed over surfaces of the second metal nitride material within the opening. Apparatuses and electronic systems are also described.

公开(公告)号：US20200321340A1

公开(公告)日：2020-10-08

申请号：US16906718

申请日：2020-06-19

Applicant: Micron Technology, Inc.

Inventor： Kentaro Ishii ,  Yongjun J. Hu ,  Amirhasan Nourbakhsh ,  Durai Vishak Nirmal Ramaswamy ,  Christopher W. Petz ,  Luca Fumagalli

IPC: H01L27/108

Abstract: A method of forming an apparatus comprises forming a first metal nitride material over an upper surface of a conductive material within an opening extending through at least one dielectric material through a non-conformal deposition process. A second metal nitride material is formed over an upper surface of the first metal nitride material and side surfaces of the at least one dielectric material partially defining boundaries of the opening through a conformal deposition process. A conductive structure is formed over surfaces of the second metal nitride material within the opening. Apparatuses and electronic systems are also described.

公开(公告)号：US10707212B1

公开(公告)日：2020-07-07

申请号：US16235957

申请日：2018-12-28

Applicant: Micron Technology, Inc.

Inventor： Kentaro Ishii ,  Yongjun J. Hu ,  Amirhasan Nourbakhsh ,  Durai Vishak Nirmal Ramaswamy ,  Christopher W. Petz ,  Luca Fumagalli

IPC: H01L27/108

Abstract: A method of forming an apparatus comprises forming a first metal nitride material over an upper surface of a conductive material within an opening extending through at least one dielectric material through a non-conformal deposition process. A second metal nitride material is formed over an upper surface of the first metal nitride material and side surfaces of the at least one dielectric material partially defining boundaries of the opening through a conformal deposition process. A conductive structure is formed over surfaces of the second metal nitride material within the opening. Apparatuses and electronic systems are also described.

公开(公告)号：US10950496B2

公开(公告)日：2021-03-16

申请号：US16856824

申请日：2020-04-23

Applicant: Micron Technology, Inc.

Inventor： Kentaro Ishii

IPC: H01L23/532 ,  H01L21/768

Abstract: A microelectronic device comprises a first conductive material comprising copper, a conductive plug comprising tungsten in electrical communication with the first conductive material, and manganese particles dispersed along an interface between the first conductive material and the conductive plug. Related electronic systems and related methods are also disclosed.

公开(公告)号：US20210020503A1

公开(公告)日：2021-01-21

申请号：US16856824

申请日：2020-04-23

Applicant: Micron Technology, Inc.

Inventor： Kentaro Ishii

IPC: H01L21/768 ,  H01L23/532

Abstract: A microelectronic device comprises a first conductive material comprising copper, a conductive plug comprising tungsten in electrical communication with the first conductive material, and manganese particles dispersed along an interface between the first conductive material and the conductive plug. Related electronic systems and related methods are also disclosed.

公开(公告)号：US10651084B1

公开(公告)日：2020-05-12

申请号：US16515265

申请日：2019-07-18

Applicant: Micron Technology, Inc.

Inventor： Kentaro Ishii

IPC: H01L21/768 ,  H01L23/532

Abstract: A microelectronic device comprises a first conductive material comprising copper, a conductive plug comprising tungsten in electrical communication with the first conductive material, and manganese particles dispersed along an interface between the first conductive material and the conductive plug. Related electronic systems and related methods are also disclosed.

公开(公告)号：US11127745B2

公开(公告)日：2021-09-21

申请号：US16906718

申请日：2020-06-19

Applicant: Micron Technology, Inc.

Inventor： Kentaro Ishii ,  Yongjun J. Hu ,  Amirhasan Nourbakhsh ,  Durai Vishak Nirmal Ramaswamy ,  Christopher W. Petz ,  Luca Fumagalli

IPC: H01L27/108

Abstract: A method of forming an apparatus comprises forming a first metal nitride material over an upper surface of a conductive material within an opening extending through at least one dielectric material through a non-conformal deposition process. A second metal nitride material is formed over an upper surface of the first metal nitride material and side surfaces of the at least one dielectric material partially defining boundaries of the opening through a conformal deposition process. A conductive structure is formed over surfaces of the second metal nitride material within the opening. Apparatuses and electronic systems are also described.