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    Integrated Assemblies, and Methods of Forming Integrated Assemblies
    1.
    发明申请
    Integrated Assemblies, and Methods of Forming Integrated Assemblies 审中-公开

    公开(公告)号：US20200235103A1

    公开(公告)日：2020-07-23

    申请号：US16831355

    申请日：2020-03-26

    Applicant: Micron Technology, Inc.

    Inventor： Amirhasan Nourbakhsh ,  John K. Zahurak ,  Sanh D. Tang ,  Silvia Borsari ,  Hong Li

    IPC: H01L27/108 ,  H01L29/66 ,  H01L29/78

    Abstract: Some embodiments include an integrated assembly having digit lines extending along a first direction, and rails over the digit lines. The rails include semiconductor-material pillars alternating with intervening insulative regions. The rails have upper, middle and lower segments. A first insulative material is along the upper and lower segments of the rails. A second insulative material is along the middle segments of the rails. The second insulative material differs from the first insulative material in one or both of thickness and composition. Conductive gate material is along the middle segments of the rails and is spaced from the middle segments by the second insulative material. Channel regions are within the middle segments of the pillars, upper source/drain regions are within the upper segments of the pillars and lower source/drain regions are within the lower segments of the pillars. Some embodiments include methods of forming integrated assemblies.

    Integrated assemblies, and methods of forming integrated assemblies
    3.
    发明授权
    Integrated assemblies, and methods of forming integrated assemblies 有权

    公开(公告)号：US11508734B2

    公开(公告)日：2022-11-22

    申请号：US17119129

    申请日：2020-12-11

    Applicant: Micron Technology, Inc.

    Inventor： Amirhasan Nourbakhsh ,  John K. Zahurak ,  Sanh D. Tang ,  Silvia Borsari ,  Hong Li

    IPC: H01L27/108 ,  H01L29/78 ,  H01L29/66

    Abstract: Some embodiments include an integrated assembly having digit lines extending along a first direction, and rails over the digit lines. The rails include semiconductor-material pillars alternating with intervening insulative regions. The rails have upper, middle and lower segments. A first insulative material is along the upper and lower segments of the rails. A second insulative material is along the middle segments of the rails. The second insulative material differs from the first insulative material in one or both of thickness and composition. Conductive gate material is along the middle segments of the rails and is spaced from the middle segments by the second insulative material. Channel regions are within the middle segments of the pillars, upper source/drain regions are within the upper segments of the pillars and lower source/drain regions are within the lower segments of the pillars. Some embodiments include methods of forming integrated assemblies.

    Integrated assemblies, and methods of forming integrated assemblies
    5.
    发明授权
    Integrated assemblies, and methods of forming integrated assemblies 有权

    公开(公告)号：US10886282B2

    公开(公告)日：2021-01-05

    申请号：US16831355

    申请日：2020-03-26

    Applicant: Micron Technology, Inc.

    Inventor： Amirhasan Nourbakhsh ,  John K. Zahurak ,  Sanh D. Tang ,  Silvia Borsari ,  Hong Li

    IPC: H01L27/108 ,  H01L29/66 ,  H01L29/78

    Abstract: Some embodiments include an integrated assembly having digit lines extending along a first direction, and rails over the digit lines. The rails include semiconductor-material pillars alternating with intervening insulative regions. The rails have upper, middle and lower segments. A first insulative material is along the upper and lower segments of the rails. A second insulative material is along the middle segments of the rails. The second insulative material differs from the first insulative material in one or both of thickness and composition. Conductive gate material is along the middle segments of the rails and is spaced from the middle segments by the second insulative material. Channel regions are within the middle segments of the pillars, upper source/drain regions are within the upper segments of the pillars and lower source/drain regions are within the lower segments of the pillars. Some embodiments include methods of forming integrated assemblies.

    Integrated Assemblies, and Methods of Forming Integrated Assemblies
    7.
    发明申请
    Integrated Assemblies, and Methods of Forming Integrated Assemblies 有权

    公开(公告)号：US20210098463A1

    公开(公告)日：2021-04-01

    申请号：US17119129

    申请日：2020-12-11

    Applicant: Micron Technology, Inc.

    Inventor： Amirhasan Nourbakhsh ,  John K. Zahurak ,  Sanh D. Tang ,  Silvia Borsari ,  Hong Li

    IPC: H01L27/108 ,  H01L29/78 ,  H01L29/66

    Abstract: Some embodiments include an integrated assembly having digit lines extending along a first direction, and rails over the digit lines. The rails include semiconductor-material pillars alternating with intervening insulative regions. The rails have upper, middle and lower segments. A first insulative material is along the upper and lower segments of the rails. A second insulative material is along the middle segments of the rails. The second insulative material differs from the first insulative material in one or both of thickness and composition. Conductive gate material is along the middle segments of the rails and is spaced from the middle segments by the second insulative material. Channel regions are within the middle segments of the pillars, upper source/drain regions are within the upper segments of the pillars and lower source/drain regions are within the lower segments of the pillars. Some embodiments include methods of forming integrated assemblies.

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