Invention Grant
- Patent Title: Asymmetrical lateral heterojunction bipolar transistors
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Application No.: US16733528Application Date: 2020-01-03
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Publication No.: US11127843B2Publication Date: 2021-09-21
- Inventor: Judson Holt , Alexander Derrickson , Ryan Sporer , George R. Mulfinger , Alexander Martin , Jagar Singh
- Applicant: GLOBALFOUNDRIES U.S. Inc.
- Applicant Address: US CA Santa Clara
- Assignee: GLOBALFOUNDRIES U.S. Inc.
- Current Assignee: GLOBALFOUNDRIES U.S. Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Thompson Hine LLP
- Agent Anthony Canale
- Main IPC: H01L29/737
- IPC: H01L29/737 ; H01L29/06 ; H01L29/66 ; H01L21/3065 ; H01L29/10
Abstract:
Structures for a heterojunction bipolar transistor and methods of forming a structure for a heterojunction bipolar transistor. A base layer is positioned in a cavity in a semiconductor layer, a first terminal is coupled to the base layer, and a second terminal is coupled to a portion of the semiconductor layer. The second terminal is laterally spaced from the first terminal, and the portion of the semiconductor layer is laterally positioned between the second terminal and the base layer.
Public/Granted literature
- US20210091212A1 ASYMMETRICAL LATERAL HETEROJUNCTION BIPOLAR TRANSISTORS Public/Granted day:2021-03-25
Information query
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