公开(公告)号：US20230275145A1

公开(公告)日：2023-08-31

申请号：US17739092

申请日：2022-05-07

Applicant: GlobalFoundries U.S. Inc.

Inventor： Arkadiusz Malinowski ,  Alexander Derrickson ,  Judson Holt

IPC: H01L29/735 ,  H01L29/66 ,  H01L29/165 ,  H01L21/265 ,  H01L21/324

CPC classification number: H01L29/735 ,  H01L29/6625 ,  H01L29/165 ,  H01L21/26586 ,  H01L21/324

Abstract: Structures for a bipolar junction transistor and methods of forming a structure for a bipolar junction transistor. The structure includes a first terminal having a first raised semiconductor layer on a semiconductor substrate, a second terminal having a second raised semiconductor layer on the semiconductor substrate, and an intrinsic base on the semiconductor substrate. The intrinsic base is positioned in a lateral direction between the first raised semiconductor layer of the first terminal and the second raised semiconductor layer of the second terminal. The intrinsic base includes a portion containing silicon-germanium with a germanium concentration that is graded in the lateral direction.

公开(公告)号：US11063139B2

公开(公告)日：2021-07-13

申请号：US16748055

申请日：2020-01-21

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Vibhor Jain ,  John J. Pekarik ,  Qizhi Liu ,  Judson Holt

IPC: H01L29/737 ,  H01L29/06 ,  H01L29/66 ,  H01L29/10 ,  H01L29/08

Abstract: Structures for a heterojunction bipolar transistor and methods of forming a structure for a heterojunction bipolar transistor. A collector layer includes an inclined side surface, and a dielectric layer is positioned in a lateral direction adjacent to the inclined side surface of the collector layer. An intrinsic base is disposed over the collector layer, and an emitter is disposed over the intrinsic base. An airgap is positioned between the dielectric layer and the inclined side surface of the collector layer in the lateral direction, and an extrinsic base is positioned in the lateral direction adjacent to the intrinsic base. The extrinsic base is positioned over the airgap.

公开(公告)号：US11848374B2

公开(公告)日：2023-12-19

申请号：US17574785

申请日：2022-01-13

Applicant: GlobalFoundries U.S. Inc.

Inventor： Shesh Mani Pandey ,  Jagar Singh ,  Judson Holt

IPC: H01L29/737 ,  H01L29/66 ,  H01L21/762 ,  H01L29/06

CPC classification number: H01L29/737 ,  H01L21/76289 ,  H01L29/0649 ,  H01L29/66242

Abstract: Structures for a bipolar junction transistor and methods of forming a structure for a bipolar junction transistor. The structure includes a dielectric layer having a cavity, a first semiconductor layer on the dielectric layer, a collector including a portion on the first semiconductor layer, an emitter including a portion on the first semiconductor layer, and a second semiconductor layer that includes a first section in the cavity and a second section. The second section of the second semiconductor layer is laterally positioned between the portion of the collector and the portion of the emitter.

公开(公告)号：US11835764B2

公开(公告)日：2023-12-05

申请号：US17588440

申请日：2022-01-31

Applicant: GlobalFoundries U.S. Inc.

Inventor： Shesh Mani Pandey ,  Yusheng Bian ,  Judson Holt

IPC: G02B6/136 ,  G02B6/12

CPC classification number: G02B6/136 ,  G02B2006/12061

Abstract: Waveguide structures and methods of fabricating a waveguide structure. The structure includes a first waveguide core, a second waveguide core, and a third waveguide core adjacent to the first waveguide core and the second waveguide core. The third waveguide core is laterally separated from the first waveguide core by a first slot, and the third waveguide core is laterally separated from the second waveguide core by a second slot. The first waveguide core and the second waveguide core comprise a first material, and the third waveguide core comprises a second material that is different in composition from the first material.

公开(公告)号：US20230273369A1

公开(公告)日：2023-08-31

申请号：US17680421

申请日：2022-02-25

Applicant: GlobalFoundries U.S. Inc.

Inventor： Shesh Mani Pandey ,  Yusheng Bian ,  Steven M. Shank ,  Judson Holt

IPC: G02B6/122 ,  H01L21/84 ,  G02B6/136

CPC classification number: G02B6/122 ,  G02B6/136 ,  H01L21/84

Abstract: Photonics structures including an optical component and methods of fabricating a photonics structure including an optical component. The photonics structure includes an optical component, a substrate having a cavity and a dielectric material in the cavity, and a dielectric layer positioned in a vertical direction between the optical component and the cavity. The optical component is positioned in a lateral direction to overlap with the cavity in the substrate.

公开(公告)号：US12113070B2

公开(公告)日：2024-10-08

申请号：US17830830

申请日：2022-06-02

Applicant: GlobalFoundries U.S. Inc.

Inventor： Peter Baars ,  Viorel Ontalus ,  Ketankumar H. Tailor ,  Michael Zier ,  Crystal R. Kenney ,  Judson Holt

IPC: H01L27/12 ,  H01L21/84 ,  H01L29/66

CPC classification number: H01L27/1207 ,  H01L21/84 ,  H01L29/66242

Abstract: Structures including a vertical heterojunction bipolar transistor and methods of forming a structure including a vertical heterojunction bipolar transistor. The structure comprises a semiconductor substrate including a trench, a first semiconductor layer including a portion adjacent to the trench, a dielectric layer between the first semiconductor layer and the semiconductor substrate, and a second semiconductor layer in the trench. The dielectric layer has an interface with the first semiconductor layer, and the second semiconductor layer includes a portion that is recessed relative to the interface. The structure further comprises a vertical heterojunction bipolar transistor including a collector in the portion of the second semiconductor layer.

公开(公告)号：US20230244033A1

公开(公告)日：2023-08-03

申请号：US17588440

申请日：2022-01-31

Applicant: GlobalFoundries U.S. Inc.

Inventor： Shesh Mani Pandey ,  Yusheng Bian ,  Judson Holt

IPC: G02B6/136

CPC classification number: G02B6/136 ,  G02B2006/12061

Abstract: Waveguide structures and methods of fabricating a waveguide structure. The structure includes a first waveguide core, a second waveguide core, and a third waveguide core adjacent to the first waveguide core and the second waveguide core. The third waveguide core is laterally separated from the first waveguide core by a first slot, and the third waveguide core is laterally separated from the second waveguide core by a second slot. The first waveguide core and the second waveguide core comprise a first material, and the third waveguide core comprises a second material that is different in composition from the first material.

公开(公告)号：US11567266B1

公开(公告)日：2023-01-31

申请号：US17551377

申请日：2021-12-15

Applicant: GlobalFoundries U.S. Inc.

Inventor： Judson Holt ,  Yusheng Bian ,  Qizhi Liu ,  Elizabeth Strehlow

IPC: G02B6/34 ,  G02B6/124 ,  G02B6/12 ,  G02B6/293 ,  G02B6/42

Abstract: Structures for a grating coupler and methods of fabricating a structure for a grating coupler. The structure includes a grating coupler having a central portion and edge portions. The central portion and the edge portions define a sidewall, and the central portion and the edge portions have a first longitudinal axis along which the edge portions are arranged in a spaced relationship. Each edge portion projects from the sidewall at an angle relative to the first longitudinal axis. A waveguide core is optically coupled to the grating coupler. The first longitudinal axis is aligned in a first direction, and the waveguide core has a second longitudinal axis that is aligned in a second direction different from the first direction.

公开(公告)号：US11164795B2

公开(公告)日：2021-11-02

申请号：US16828273

申请日：2020-03-24

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Sipeng Gu ,  Judson Holt ,  Haiting Wang ,  Bangun Indajang

IPC: H01L21/8238 ,  H01L27/092 ,  H01L29/10 ,  H01L29/08

Abstract: Structures for a field-effect transistor and methods of forming a structure for a field-effect transistor. First and second gate structures extend over the semiconductor body. A source/drain region is positioned laterally between the first gate structure and the second gate structure. The source/drain region includes a semiconductor layer having a first section, a second section, and a third section. A first portion of the semiconductor body is positioned between the first section of the semiconductor layer and the second section of the semiconductor layer. A second portion of the semiconductor body is positioned between the second section of the semiconductor layer and the third section of the semiconductor layer.

公开(公告)号：US20210305103A1

公开(公告)日：2021-09-30

申请号：US16828273

申请日：2020-03-24

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Sipeng Gu ,  Judson Holt ,  Haiting Wang ,  Bangun Indajang

IPC: H01L21/8238 ,  H01L27/092 ,  H01L29/08 ,  H01L29/10

Abstract: Structures for a field-effect transistor and methods of forming a structure for a field-effect transistor. First and second gate structures extend over the semiconductor body. A source/drain region is positioned laterally between the first gate structure and the second gate structure. The source/drain region includes a semiconductor layer having a first section, a second section, and a third section. A first portion of the semiconductor body is positioned between the first section of the semiconductor layer and the second section of the semiconductor layer. A second portion of the semiconductor body is positioned between the second section of the semiconductor layer and the third section of the semiconductor layer.