Invention Grant
- Patent Title: Amplifier with post-distortion linearization
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Application No.: US16734484Application Date: 2020-01-06
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Publication No.: US11128265B2Publication Date: 2021-09-21
- Inventor: Youngchang Yoon , Kyuhwan An , Jihoon Kim , Sangho Lee
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Priority: KR10-2019-0001974 20190107
- Main IPC: H03F1/22
- IPC: H03F1/22 ; H03F1/32 ; H03F3/16

Abstract:
A communication method and system for converging a 5th-Generation (5G) communication system for supporting higher data rates beyond a 4th-Generation (4G) system with a technology for Internet of Things (IoT) are provided. The disclosure may be applied to intelligent services based on the 5G communication technology and the IoT-related technology, such as smart home, smart building, smart city, smart car, connected car, health care, digital education, smart retail, security and safety services. An amplifier includes a first transistor for amplifying the fundamental signal applied to a gate terminal, and a second transistor having a source terminal electrically connected to the drain terminal of the first transistor and a drain terminal electrically connected to a bias voltage. The current flowing through the second transistor may be determined based on the current flowing in the drain terminal of the first transistor.
Public/Granted literature
- US20200220505A1 AMPLIFIER WITH POST-DISTORTION LINEARIZATION Public/Granted day:2020-07-09
Information query
IPC分类: