Invention Grant
- Patent Title: Semiconductor devices having cutouts in an encapsulation material and associated production methods
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Application No.: US16447610Application Date: 2019-06-20
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Publication No.: US11145563B2Publication Date: 2021-10-12
- Inventor: Christian Geissler , Walter Hartner , Claus Waechter , Maciej Wojnowski
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Harrity & Harrity LLP
- Priority: DE102018210755.6 20180629,DE102019112940.0 20190516
- Main IPC: H01L23/31
- IPC: H01L23/31 ; H01L21/56 ; H01L21/683 ; H01L23/00
Abstract:
A method comprises providing a least one semiconductor component, wherein each of the at least one semiconductor component comprises: a semiconductor chip, wherein the semiconductor chip comprises a first main surface and a second main surface opposite the first main surface, and a sacrificial layer arranged above the opposite second main surface of the semiconductor chip. The method further comprises encapsulating the at least one semiconductor component with an encapsulation material. The method further comprises removing the sacrificial material, wherein above each of the at least one semiconductor chip a cutout is formed in the encapsulation material. The method further comprises arranging at least one lid above the at least one cutout, wherein a closed cavity is formed by the at least one cutout and the at least one lid above each of the at least one semiconductor chip.
Public/Granted literature
- US20200006174A1 SEMICONDUCTOR DEVICES HAVING CUTOUTS IN AN ENCAPSULATION MATERIAL AND ASSOCIATED PRODUCTION METHODS Public/Granted day:2020-01-02
Information query
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