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公开(公告)号：US10899604B2
公开(公告)日：2021-01-26
申请号：US16387918
申请日：2019-04-18
Applicant: Infineon Technologies AG
Inventor： Florian Brandl , Christian Geissler , Robert Gruenberger , Claus Waechter , Bernhard Winkler
Abstract: A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a substrate having a first surface and a second surface arranged opposite to the first surface; a stress-sensitive sensor disposed at the first surface of the substrate, where the stress-sensitive sensor is sensitive to mechanical stress; a stress-decoupling trench that has a vertical extension that extends from the first surface into the substrate, where the stress-decoupling trench vertically extends partially into the substrate towards the second surface although not completely to the second surface; and a plurality of particle filter trenches that vertically extend from the second surface into the substrate, wherein each of the plurality of particle filter trenches have a longitudinal extension that extends orthogonal to the vertical extension of the stress-decoupling trench.
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公开(公告)号：US12158448B2
公开(公告)日：2024-12-03
申请号：US18050178
申请日：2022-10-27
Applicant: Infineon Technologies AG
Inventor： Derek Debie , Klaus Elian , Ludwig Heitzer , David Tumpold , Jens Pohl , Cyrus Ghahremani , Thorsten Meyer , Christian Geissler , Andreas Allmeier
Abstract: A radiation source device includes at least one membrane layer, a radiation source structure to emit electromagnetic or infrared radiation, a substrate and a spacer structure, wherein the substrate and the at least one membrane form a chamber, wherein a pressure in the chamber is lower than or equal to a pressure outside of the chamber, and wherein the radiation source structure is arranged between the at least one membrane layer and the substrate.
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公开(公告)号：US12040543B2
公开(公告)日：2024-07-16
申请号：US17648730
申请日：2022-01-24
Applicant: Infineon Technologies AG
Inventor： Walter Hartner , Tuncay Erdoel , Klaus Elian , Christian Geissler , Bernhard Rieder , Rainer Markus Schaller , Horst Theuss , Maciej Wojnowski
CPC classification number: H01Q13/06 , H01Q1/2283 , H01Q1/526 , H01Q23/00
Abstract: A radio-frequency device comprises a printed circuit board and a radio-frequency package having a radio-frequency chip and a radio-frequency radiation element, the radio-frequency package being mounted on the printed circuit board. The radio-frequency device furthermore comprises a waveguide component having a waveguide, wherein the radio-frequency radiation element is configured to radiate transmission signals into the waveguide and/or to receive reception signals via the waveguide. The radio-frequency device furthermore comprises a gap arranged between a first side of the radio-frequency package and a second side of the waveguide component, and a shielding structure, which is configured: to permit a relative movement between the radio-frequency package and the waveguide component in a first direction perpendicular to the first side of the radio-frequency package, and to shield the transmission signals and/or the reception signals in such a way that a propagation of the signals via the gap is attenuated or prevented.
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公开(公告)号：US11505450B2
公开(公告)日：2022-11-22
申请号：US17076250
申请日：2020-10-21
Applicant: Infineon Technologies AG
Inventor： Florian Brandl , Christian Geissler , Robert Gruenberger , Claus Waechter , Bernhard Winkler
Abstract: A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a substrate having a first surface and a second surface arranged opposite to the first surface; a stress-sensitive sensor disposed at the first surface of the substrate, where the stress-sensitive sensor is sensitive to mechanical stress; a stress-decoupling trench that has a vertical extension that extends from the first surface into the substrate, where the stress-decoupling trench vertically extends partially into the substrate towards the second surface although not completely to the second surface; and a plurality of particle filter trenches that vertically extend from the second surface into the substrate, wherein each of the plurality of particle filter trenches have a longitudinal extension that extends orthogonal to the vertical extension of the stress-decoupling trench.
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5.发明申请公开(公告)号：US20200156933A1
公开(公告)日：2020-05-21
申请号：US16748087
申请日：2020-01-21
Applicant: Infineon Technologies AG
Inventor： Matthias Steiert , Christian Geissler , Karolina Zogal
Abstract: A production method includes providing a semiconductor substrate with a wiring layer stack having cutouts on a first main surface region of the semiconductor substrate at which MEMS components are arranged in an exposed manner in the cutouts and projecting through contact elements are arranged at metallization regions of the wiring layer stack; applying a b-stage material layer cured in an intermediate stage on the wiring layer stack, such that the cutouts are covered by the b-stage material layer and the vertically projecting through contact elements are introduced into the b-stage material layer; curing the b-stage material layer to obtain a cured b-stage material layer; thinning the cured b-stage material layer; and applying a redistribution layer (RDL) structure on the thinned, cured b-stage material layer to obtain an electrical connection between the wiring layer stack and the RDL structure via the through contact elements.
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Patent Agency Ranking
6.发明授权公开(公告)号：US10584028B2
公开(公告)日：2020-03-10
申请号：US15975243
申请日：2018-05-09
Applicant: Infineon Technologies AG
Inventor： Matthias Steiert , Christian Geissler , Karolina Zogal
Abstract: A production method includes providing a semiconductor substrate with a wiring layer stack having cutouts on a first main surface region of the semiconductor substrate at which MEMS components are arranged in an exposed manner in the cutouts and projecting through contact elements are arranged at metallization regions of the wiring layer stack; applying a b-stage material layer cured in an intermediate stage on the wiring layer stack, such that the cutouts are covered by the b-stage material layer and the vertically projecting through contact elements are introduced into the b-stage material layer; curing the b-stage material layer to obtain a cured b-stage material layer; thinning the cured b-stage material layer; and applying a redistribution layer (RDL) structure on the thinned, cured b-stage material layer to obtain an electrical connection between the wiring layer stack and the RDL structure via the through contact elements.
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公开(公告)号：US10549985B2
公开(公告)日：2020-02-04
申请号：US15692938
申请日：2017-08-31
Applicant: Infineon Technologies AG
Inventor： Dominic Maier , Matthias Steiert , Chau Fatt Chiang , Christian Geissler , Bernd Goller , Thomas Kilger , Johannes Lodermeyer , Franz-Xaver Muehlbauer , Chee Yang Ng , Beng Keh See , Claus Waechter
Abstract: A semiconductor package includes a semiconductor die having a sensor structure disposed at a first side of the semiconductor die, and a first port extending through the semiconductor die from the first side to a second side of the semiconductor die opposite the first side, so as to provide a link to the outside environment. Corresponding methods of manufacture are also provided.
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8.发明申请公开(公告)号：US20180327258A1
公开(公告)日：2018-11-15
申请号：US15975243
申请日：2018-05-09
Applicant: Infineon Technologies AG
Inventor： Matthias Steiert , Christian Geissler , Karolina Zogal
CPC classification number: B81C1/00333 , B32B15/043 , B81B7/0032 , B81C1/00301 , H01L23/315
Abstract: A production method includes providing a semiconductor substrate with a wiring layer stack having cutouts on a first main surface region of the semiconductor substrate at which MEMS components are arranged in an exposed manner in the cutouts and projecting through contact elements are arranged at metallization regions of the wiring layer stack; applying a b-stage material layer cured in an intermediate stage on the wiring layer stack, such that the cutouts are covered by the b-stage material layer and the vertically projecting through contact elements are introduced into the b-stage material layer; curing the b-stage material layer to obtain a cured b-stage material layer; thinning the cured b-stage material layer; and applying a redistribution layer (RDL) structure on the thinned, cured b-stage material layer to obtain an electrical connection between the wiring layer stack and the RDL structure via the through contact elements.
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9.发明申请公开(公告)号：US20180148322A1
公开(公告)日：2018-05-31
申请号：US15692938
申请日：2017-08-31
Applicant: Infineon Technologies AG
Inventor： Dominic Maier , Matthias Steiert , Chau Fatt Chiang , Christian Geissler , Bernd Goller , Thomas Kilger , Johannes Lodermeyer , Franz-Xaver Muehlbauer , Chee Yang Ng , Beng Keh See , Claus Waechter
Abstract: A semiconductor package includes a semiconductor die having a sensor structure disposed at a first side of the semiconductor die, and a first port extending through the semiconductor die from the first side to a second side of the semiconductor die opposite the first side, so as to provide a link to the outside environment. Corresponding methods of manufacture are also provided.
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公开(公告)号：US20250060338A1
公开(公告)日：2025-02-20
申请号：US18939121
申请日：2024-11-06
Applicant: Infineon Technologies AG
Inventor： Derek Debie , Klaus Elian , Ludwig Heitzer , David Tumpold , Jens Pohl , Cyrus Ghahremani , Thorsten Meyer , Christian Geissler , Andreas Allmeier
Abstract: A radiation source device includes at least one membrane layer, a radiation source structure to emit electromagnetic or infrared radiation, a substrate and a spacer structure, wherein the substrate and the at least one membrane form a chamber, wherein a pressure in the chamber is lower than or equal to a pressure outside of the chamber, and wherein the radiation source structure is arranged between the at least one membrane layer and the substrate.
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