Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
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Application No.: US16505228Application Date: 2019-07-08
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Publication No.: US11145597B2Publication Date: 2021-10-12
- Inventor: Shinichi Kuwabara , Yasutaka Nakashiba , Teruhiro Kuwajima
- Applicant: RENESAS ELECTRONICS CORPORATION
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: McDermott Will & Emery LLP
- Priority: JPJP2018-144797 20180801
- Main IPC: H01L23/522
- IPC: H01L23/522 ; H01L23/495 ; H01L23/00 ; H01L21/762 ; H01L21/8238 ; H01L23/528 ; H01L21/768 ; H01L27/092 ; H01L27/06

Abstract:
A semiconductor device includes a first semiconductor chip on which a first circuit is formed and a second semiconductor chip on which two circuits are formed. In the first semiconductor chip, a first inductor on the transmitting side electrically connected with the first circuit and a second inductor on the receiving side electrically connected with the second circuit via the bonding wire are formed. In plan view, the first inductor and the second inductor are disposed so as not to overlap each other, and are arranged along each other.
Public/Granted literature
- US20200043847A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2020-02-06
Information query
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