Invention Grant
- Patent Title: Process for the generation of thin silicon-containing films
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Application No.: US16338915Application Date: 2017-10-18
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Publication No.: US11149349B2Publication Date: 2021-10-19
- Inventor: Maraike Ahlf , David Dominique Schweinfurth , Lukas Mayr , Kinga Izabela Leszczynska , David Scheschkewitz
- Applicant: BASF SE
- Applicant Address: DE Ludwigshafen am Rhein
- Assignee: BASF SE
- Current Assignee: BASF SE
- Current Assignee Address: DE Ludwigshafen am Rhein
- Agency: Armstrong Teasdale LLP
- Priority: EP16195487 20161025
- International Application: PCT/EP2017/076556 WO 20171018
- International Announcement: WO2018/077684 WO 20180503
- Main IPC: C23C16/455
- IPC: C23C16/455 ; C23C16/32 ; C23C16/34 ; C23C16/38 ; C23C16/40
Abstract:
The present invention is in the field of processes for the generation of thin inorganic films on substrates. In particular, the present invention relates to a process comprising depositing the compound of general formula (I) onto a solid substrate, wherein R1, R2, R3, R4, and R5 is hydrogen, an alkyl group, an alkenyl group, an aryl group or a silyl group, wherein not more than three of R1, R2, R3, R4, and R5 are hydrogen, X is a group which binds to silicon, m is 1 or 2, n is 0, 1, or 2, and Si is in the oxidation state +2.
Public/Granted literature
- US20190309417A1 PROCESS FOR THE GENERATION OF THIN SILICON-CONTAINING FILMS Public/Granted day:2019-10-10
Information query
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