Invention Grant
- Patent Title: Embedding method and processing system
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Application No.: US16574672Application Date: 2019-09-18
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Publication No.: US11152260B2Publication Date: 2021-10-19
- Inventor: Tadahiro Ishizaka
- Applicant: TOKYO ELECTRON LIMITED
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Nath, Goldberg & Meyer
- Agent Jerald L. Meyer; Tanya E. Harkins
- Priority: JPJP2018-176468 20180920
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L21/285 ; H01L21/67
Abstract:
An embedding method includes: removing a metal oxide film at a surface of a metal layer from a substrate that includes the metal layer on a bottom of a recess formed in an insulating layer; covering the surface of the metal layer by embedding ruthenium in the recess from the bottom of the recess; forming a ruthenium liner film in the recess; and further embedding ruthenium in the recess in which the liner film is formed.
Public/Granted literature
- US20200098627A1 EMBEDDING METHOD AND PROCESSING SYSTEM Public/Granted day:2020-03-26
Information query
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