Invention Grant
- Patent Title: Method of forming capped metallized vias
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Application No.: US16681330Application Date: 2019-11-12
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Publication No.: US11158519B2Publication Date: 2021-10-26
- Inventor: Navaneetha Krishnan Subbaiyan , William Richard Trutna
- Applicant: Corning Incorporated
- Applicant Address: US NY Corning
- Assignee: Corning Incorporated
- Current Assignee: Corning Incorporated
- Current Assignee Address: US NY Corning
- Agent Kevin L. Bray
- Main IPC: H01L21/48
- IPC: H01L21/48 ; H01L21/768 ; H01L23/498 ; H01L23/15 ; H01L23/14
Abstract:
A method of forming an article, including: inserting a conductive material within a via a wafer, wherein the conductive material comprises a first alloy comprising a first metal and a second metal; and contacting the conductive material with a solution comprising ions of a third metal, wherein the ions of the third metal galvanically displace a portion of the second metal from the first alloy to form a second alloy with the first metal.
Public/Granted literature
- US20200185272A1 METHOD OF FORMING CAPPED METALLIZED VIAS Public/Granted day:2020-06-11
Information query
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