Invention Grant
- Patent Title: Semiconductor device with a passivation layer and method for producing thereof
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Application No.: US16394803Application Date: 2019-04-25
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Publication No.: US11158557B2Publication Date: 2021-10-26
- Inventor: Jens Peter Konrath , Christian Hecht , Roland Rupp , Andre Kabakow
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Main IPC: H01L23/31
- IPC: H01L23/31 ; H01L29/739 ; H01L29/78 ; H01L29/808 ; H01L29/861 ; H01L29/06 ; H01L29/10 ; H01L21/02 ; H01L21/28 ; H01L21/283 ; H01L21/308 ; H01L21/56 ; H01L23/29 ; H01L27/06 ; H01L29/47 ; H01L29/66 ; H01L29/70 ; H01L29/872 ; H01L29/423

Abstract:
A semiconductor device includes a semiconductor body comprising a first surface and an edge surface, a contact electrode formed on the first surface and comprising an outer edge side, and a passivation layer section conformally covering the outer edge side of the contact electrode. The passivation layer section is a multi-layer stack comprising a first layer, a second layer, and a third layer. Each of the first, second and third layers comprise outer edge sides facing the edge surface and opposite facing inner edge sides. The outer edge side of the contact electrode is disposed laterally between the inner edge sides and the outer edge sides of each layer. The inner and outer edge sides of the third layer are closer to the outer edge side of the electrode than the respective inner and outer edge sides of the first and second layer.
Public/Granted literature
- US20190252282A1 Semiconductor Device with a Passivation Layer and Method for Producing Thereof Public/Granted day:2019-08-15
Information query
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