- Patent Title: Self-aligned double patterning with spatial atomic layer deposition
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Application No.: US14595595Application Date: 2015-01-13
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Publication No.: US11164753B2Publication Date: 2021-11-02
- Inventor: Ning Li , Victor Nguyen , Mihaela Balseanu , Li-Qun Xia , Keiichi Tanaka , Steven D. Marcus
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Servilla Whitney LLC
- Main IPC: H01L21/311
- IPC: H01L21/311 ; H01L21/033 ; H01J37/32 ; H01L21/687 ; C23C16/455
Abstract:
Provided are self-aligned double patterning methods including feature trimming. The SADP process is performed in a single batch processing chamber in which the substrate is laterally moved between sections of the processing chamber separated by gas curtains so that each section independently has a process condition.
Public/Granted literature
- US20150200110A1 Self-Aligned Double Patterning With Spatial Atomic Layer Deposition Public/Granted day:2015-07-16
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