- 专利标题： Composite semiconductor substrate, semiconductor device and method for manufacturing the same
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申请号： US15939883申请日： 2018-03-29
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公开(公告)号： US11171039B2公开(公告)日： 2021-11-09
- 发明人: Min-Ying Tsai , Cheng-Ta Wu , Yu-Hung Cheng , Yeur-Luen Tu
- 申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- 申请人地址： TW Hsinchu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- 当前专利权人地址： TW Hsinchu
- 代理机构： WPAT, P.C., Intellectual Property Attorneys
- 代理商 Anthony King
- 主分类号： H01L21/763
- IPC分类号： H01L21/763 ; H01L29/04 ; H01L29/32 ; H01L21/02 ; H01L21/762 ; H01L29/10 ; H01L23/66
摘要：
A composite semiconductor substrate includes a semiconductor substrate, an oxygen-doped crystalline semiconductor layer and an insulative layer. The oxygen-doped crystalline semiconductor layer is over the semiconductor substrate, and the oxygen-doped crystalline semiconductor layer includes a crystalline semiconductor material and a plurality of oxygen dopants. The insulative layer is over the oxygen-doped crystalline semiconductor layer.
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