Invention Grant
- Patent Title: Thin film transistor comprising active layer having thickness difference and display apparatus comprising the same
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Application No.: US16519577Application Date: 2019-07-23
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Publication No.: US11171245B2Publication Date: 2021-11-09
- Inventor: JuHeyuck Baeck , Dohyung Lee , ChanYong Jeong
- Applicant: LG Display Co., Ltd.
- Applicant Address: KR Seoul
- Assignee: LG Display Co., Ltd.
- Current Assignee: LG Display Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: Polsinelli PC
- Priority: KR10-2018-0172770 20181228
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L27/12 ; H01L27/32
Abstract:
A thin film transistor includes an active layer including a channel portion; a gate electrode spaced apart from the active layer and overlapping at least a part of the active layer; and source and drain electrodes connected with the active layer and spaced apart from each other, wherein the channel portion includes, a first boundary portion connected with one of the source and drain electrodes; a second boundary portion connected with the other one of the source and drain electrodes; and a main channel portion interposed between the first boundary portion and the second boundary portion, and wherein at least a part of the second boundary portion has a thickness smaller than a thickness of the main channel portion.
Public/Granted literature
Information query
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