公开(公告)号：US11600677B2

公开(公告)日：2023-03-07

申请号：US17122811

申请日：2020-12-15

Applicant: LG Display Co., Ltd.

Inventor： Dohyung Lee ,  ChanYong Jeong ,  JuHeyuck Baeck

IPC: H01L27/00 ,  H01L29/00 ,  H01L27/32 ,  H01L29/786 ,  H01L29/24 ,  H01L27/12

Abstract: A thin film transistor (TFT) array substrate for an electronic device includes a first active layer of a first TFT which is an oxide semiconductor layer including molybdenum, a second active layer of a second TFT which is an oxide semiconductor layer and disposed on a buffer layer to be spaced apart from the first active layer of the first TFT, a first gate insulating film overlapping the first active layer and the second active layer, a first gate electrode of the first TFT overlapping the first gate insulating film and a part of the first active layer, and a second gate electrode of the second TFT overlapping the first gate insulating film, spaced apart from the first gate electrode, and overlapping a part of the second active layer. Accordingly, the first TFT has a high subthreshold parameter, and the second TFT has high mobility.

公开(公告)号：US11482623B2

公开(公告)日：2022-10-25

申请号：US17115603

申请日：2020-12-08

Applicant: LG Display Co., Ltd.

Inventor： JuHeyuck Baeck ,  Dohyung Lee ,  ChanYong Jeong

IPC: H01L29/786 ,  H01L27/32

Abstract: Provided are a thin film transistor array substrate and an electronic device including the same. More specifically, the thin film transistor array includes a first active layer including a first area, a second area spaced apart from the first area, and a channel area provided between the first area and the second area, a first gate electrode disposed on the first active layer, and a second gate electrode disposed on the same layer as the first gate electrode to overlap one end of the first gate electrode and to which a signal corresponding to a signal applied to the first gate electrode is applied. Therefore, it is possible to have a structure for simultaneously controlling the threshold voltage, mobility, and subthreshold (S) parameter of a thin film transistor.

公开(公告)号：US10692975B2

公开(公告)日：2020-06-23

申请号：US16210934

申请日：2018-12-05

Applicant: LG DISPLAY CO., LTD.

Inventor： Juheyuck Baeck ,  Jonguk Bae ,  Saeroonter Oh ,  Dohyung Lee ,  Taeuk Park

IPC: H01L29/10 ,  H01L29/49 ,  H01L29/786 ,  H01L27/12 ,  H01L29/417 ,  H01L29/66

Abstract: A thin-film transistor according to an exemplary embodiment of the present invention comprises an active layer; an intermediate layer; a gate insulating film; a gate electrode; an interlayer insulating film; and source and drain electrodes. The active layer is positioned on a substrate, and the gate insulating film is positioned on the active layer. The gate electrode is positioned on the gate insulating film, and the interlayer insulating film is positioned on the gate electrode. The source and drain electrodes are positioned on the interlayer insulating film and connected to the active layer. The intermediate layer is positioned between the active layer and the gate insulating film, and made of an oxide semiconductor comprising a Group IV element.

公开(公告)号：US10192957B2

公开(公告)日：2019-01-29

申请号：US15531952

申请日：2015-12-16

Applicant: LG DISPLAY CO., LTD.

Inventor： Juheyuck Baeck ,  Jonguk Bae ,  Saeroonter Oh ,  Dohyung Lee ,  Taeuk Park

IPC: H01L29/10 ,  H01L27/12 ,  H01L29/417 ,  H01L29/66 ,  H01L29/786 ,  H01L29/49

Abstract: a thin-film transistor according to an exemplary embodiment of the present invention comprises an active layer; an intermediate layer; a gate insulating film; a gate electrode; an interlayer insulating film; and source and drain electrodes. The active layer is positioned on a substrate, and the gate insulating film is positioned on the active layer. The gate electrode is positioned on the gate insulating film, and the interlayer insulating film is positioned on the gate electrode. The source and drain electrodes are positioned on the interlayer insulating film and connected to the active layer. The intermediate layer is positioned between the active layer and the gate insulating film, and made of an oxide semiconductor comprising a Group IV element.

公开(公告)号：US11888069B2

公开(公告)日：2024-01-30

申请号：US17398767

申请日：2021-08-10

Applicant: LG Display Co., Ltd.

Inventor： Dohyung Lee ,  Juheyuck Baeck ,  ChanYong Jeong

IPC: H01L29/786 ,  H01L27/12 ,  G09G3/3233

CPC classification number: H01L29/78645 ,  G09G3/3233 ,  H01L27/1225 ,  H01L29/7869 ,  G09G2300/0842

Abstract: One embodiment of the present disclosure provides a thin film transistor comprising an auxiliary electrode, a gate electrode and an active layer disposed between the auxiliary electrode and the gate electrode, wherein the active layer includes a channel portion overlapped with the gate electrode, a first connection portion disposed at one side of the channel portion, and a second connection portion disposed at the other side of the channel portion, and the channel portion includes a first portion overlapped with the auxiliary electrode and a second portion not overlapped with the auxiliary electrode. One embodiment of the present disclosure also provides a display apparatus comprising the thin film transistor.

公开(公告)号：US20210399142A1

公开(公告)日：2021-12-23

申请号：US17340937

申请日：2021-06-07

Applicant: LG Display Co., Ltd.

Inventor： ChanYong Jeong ,  JuHeyuck Baeck ,  Dohyung Lee ,  Younghyun Ko

IPC: H01L29/786

Abstract: Embodiments of the present disclosure relate to a thin film transistor array substrate and display device in which a semiconductor layer has a heterogeneous conductorization structure including heterogeneous conductorization portions having different electrical conductivity, and the gate insulator layer is not etched enough to expose the semiconductor layer between the source electrode part and the gate electrode part and between the drain electrode part and the gate electrode part, so that the possibility of damage to the semiconductor layer can be eliminated or reduced.

公开(公告)号：US11195956B2

公开(公告)日：2021-12-07

申请号：US16502312

申请日：2019-07-03

Applicant: LG Display Co., Ltd.

Inventor： JuHeyuck Baeck ,  Dohyung Lee ,  ChanYong Jeong

IPC: H01L29/786 ,  H01L29/66 ,  H01L27/32 ,  H01L27/12

Abstract: A thin-film transistor, a display device including a thin-film transistor, and a method of manufacturing a thin-film transistor are provided. A thin-film transistor includes: a semiconductor layer including: a first oxide semiconductor layer including gallium (Ga), a second oxide semiconductor layer, and a silicon semiconductor layer between the first oxide semiconductor layer and the second oxide semiconductor layer, and a gate electrode spaced apart from the semiconductor layer and partially overlapping at least a part of the semiconductor layer.

公开(公告)号：US12148841B2

公开(公告)日：2024-11-19

申请号：US17340937

申请日：2021-06-07

Applicant: LG Display Co., Ltd.

Inventor： Chanyong Jeong ,  Juheyuck Baeck ,  Dohyung Lee ,  Younghyun Ko

IPC: H01L29/786

Abstract: Embodiments of the present disclosure relate to a thin film transistor array substrate and display device in which a semiconductor layer has a heterogeneous conductorization structure including heterogeneous conductorization portions having different electrical conductivity, and the gate insulator layer is not etched enough to expose the semiconductor layer between the source electrode part and the gate electrode part and between the drain electrode part and the gate electrode part, so that the possibility of damage to the semiconductor layer can be eliminated or reduced.

公开(公告)号：US12142691B2

公开(公告)日：2024-11-12

申请号：US17563887

申请日：2021-12-28

Applicant: LG Display Co., Ltd.

Inventor： JuHeyuck Baeck ,  Dohyung Lee ,  ChanYong Jeong

IPC: H01L29/786 ,  H01L29/49 ,  H01L29/66

Abstract: A thin film transistor can include a first gate electrode, an active layer including a channel portion, and a second gate electrode. The active layer is between the first gate electrode and the second gate electrode, and at least a portion of the first gate electrode does not overlap with the second gate electrode. Further, at least a portion of the second gate electrode does not overlap with the first gate electrode, and the channel portion overlaps with at least one of the first gate electrode and the second gate electrode. In addition, a first portion of the channel portion can overlaps with one of the first gate electrode and the second gate electrode, and a second portion of the channel portion can overlap with a remaining one of the first gate electrode and the second gate electrode that is not overlapped by the first portion of the channel portion.

公开(公告)号：US12027631B2

公开(公告)日：2024-07-02

申请号：US18204224

申请日：2023-05-31

Applicant: LG DISPLAY CO., LTD.

Inventor： JuHeyuck Baeck ,  Dohyung Lee ,  ChanYong Jeong

IPC: H01L29/786 ,  H01L27/12 ,  H10K59/121 ,  H10K59/126

CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L29/78603 ,  H01L29/78633 ,  H01L29/78696 ,  H10K59/1213 ,  H10K59/126

Abstract: A thin film transistor is disclosed. The thin film transistor comprises an active layer, and a gate electrode overlapped with the active layer, wherein the active layer includes a channel portion overlapped with the gate electrode, and the channel portion includes a source boundary portion, a drain boundary portion, and a main channel portion, wherein at least a part of the drain boundary portion have a relatively smaller thickness in comparison to a thickness of the main channel portion. Also, according to one embodiment of the present disclosure, a display apparatus comprising the thin film transistor is provided.