公开(公告)号：US11600677B2

公开(公告)日：2023-03-07

申请号：US17122811

申请日：2020-12-15

申请人： LG Display Co., Ltd.

发明人： Dohyung Lee ,  ChanYong Jeong ,  JuHeyuck Baeck

IPC分类号： H01L27/00 ,  H01L29/00 ,  H01L27/32 ,  H01L29/786 ,  H01L29/24 ,  H01L27/12

摘要： A thin film transistor (TFT) array substrate for an electronic device includes a first active layer of a first TFT which is an oxide semiconductor layer including molybdenum, a second active layer of a second TFT which is an oxide semiconductor layer and disposed on a buffer layer to be spaced apart from the first active layer of the first TFT, a first gate insulating film overlapping the first active layer and the second active layer, a first gate electrode of the first TFT overlapping the first gate insulating film and a part of the first active layer, and a second gate electrode of the second TFT overlapping the first gate insulating film, spaced apart from the first gate electrode, and overlapping a part of the second active layer. Accordingly, the first TFT has a high subthreshold parameter, and the second TFT has high mobility.

公开(公告)号：US11482623B2

公开(公告)日：2022-10-25

申请号：US17115603

申请日：2020-12-08

申请人： LG Display Co., Ltd.

发明人： JuHeyuck Baeck ,  Dohyung Lee ,  ChanYong Jeong

IPC分类号： H01L29/786 ,  H01L27/32

摘要： Provided are a thin film transistor array substrate and an electronic device including the same. More specifically, the thin film transistor array includes a first active layer including a first area, a second area spaced apart from the first area, and a channel area provided between the first area and the second area, a first gate electrode disposed on the first active layer, and a second gate electrode disposed on the same layer as the first gate electrode to overlap one end of the first gate electrode and to which a signal corresponding to a signal applied to the first gate electrode is applied. Therefore, it is possible to have a structure for simultaneously controlling the threshold voltage, mobility, and subthreshold (S) parameter of a thin film transistor.

公开(公告)号：US20230361189A1

公开(公告)日：2023-11-09

申请号：US18217147

申请日：2023-06-30

申请人： LG Display Co., Ltd.

发明人： Dohyung Lee ,  JuHeyuck Baeck ,  ChanYong Jeong

IPC分类号： H01L29/423 ,  H01L27/146 ,  H01L29/43

CPC分类号： H01L29/42376 ,  H01L27/14614 ,  H01L29/42384 ,  H01L29/435

摘要： A thin film transistor array substrate and an electronic device including the thin film transistor array are disclosed. The thin film transistor comprises a substrate, a first active layer on the substrate, a gate electrode on the first active layer, a second active layer on the gate electrode such that the gate electrode is between the first active layer and the second active layer. The gate electrode is configured to drive the first active layer and the second active layer. Thereby, it is possible to provide the thin film transistor array substrate including one or more thin film transistors having high current characteristics in a small area, and the electronic device including the thin film transistor array substrate.

公开(公告)号：US20220190170A1

公开(公告)日：2022-06-16

申请号：US17398767

申请日：2021-08-10

申请人： LG Display Co., Ltd.

发明人： Dohyung Lee ,  JuHeyuck Baeck ,  ChanYong Jeong

IPC分类号： H01L29/786 ,  G09G3/3233 ,  H01L27/12

摘要： One embodiment of the present disclosure provides a thin film transistor comprising an auxiliary electrode, a gate electrode and an active layer disposed between the auxiliary electrode and the gate electrode, wherein the active layer includes a channel portion overlapped with the gate electrode, a first connection portion disposed at one side of the channel portion, and a second connection portion disposed at the other side of the channel portion, and the channel portion includes a first portion overlapped with the auxiliary electrode and a second portion not overlapped with the auxiliary electrode. One embodiment of the present disclosure also provides a display apparatus comprising the thin film transistor.

公开(公告)号：US11171245B2

公开(公告)日：2021-11-09

申请号：US16519577

申请日：2019-07-23

申请人： LG Display Co., Ltd.

发明人： JuHeyuck Baeck ,  Dohyung Lee ,  ChanYong Jeong

IPC分类号： H01L29/786 ,  H01L27/12 ,  H01L27/32

摘要： A thin film transistor includes an active layer including a channel portion; a gate electrode spaced apart from the active layer and overlapping at least a part of the active layer; and source and drain electrodes connected with the active layer and spaced apart from each other, wherein the channel portion includes, a first boundary portion connected with one of the source and drain electrodes; a second boundary portion connected with the other one of the source and drain electrodes; and a main channel portion interposed between the first boundary portion and the second boundary portion, and wherein at least a part of the second boundary portion has a thickness smaller than a thickness of the main channel portion.

公开(公告)号：US20240222512A1

公开(公告)日：2024-07-04

申请号：US18532865

申请日：2023-12-07

申请人： LG Display Co., Ltd.

发明人： YoungHyun Ko ,  ChanYong Jeong ,  JuHeyuck Baeck ,  GaWon Yang

IPC分类号： H01L29/786 ,  H01L29/417

CPC分类号： H01L29/78621 ,  H01L29/41733 ,  H01L29/78633 ,  H01L29/45

摘要： Provided are a thin film transistor and a display device. The thin film transistor has a structure in which an active layer has an induced conductorized portion located between a main conductorized portion and a channel area, with the induced conductorized portion overlapping a portion of one side of a light shield layer. The possibility of damage to the active layer is removed or minimized. A short channel is easily realized.

公开(公告)号：US11888069B2

公开(公告)日：2024-01-30

申请号：US17398767

申请日：2021-08-10

申请人： LG Display Co., Ltd.

发明人： Dohyung Lee ,  Juheyuck Baeck ,  ChanYong Jeong

IPC分类号： H01L29/786 ,  H01L27/12 ,  G09G3/3233

CPC分类号： H01L29/78645 ,  G09G3/3233 ,  H01L27/1225 ,  H01L29/7869 ,  G09G2300/0842

摘要： One embodiment of the present disclosure provides a thin film transistor comprising an auxiliary electrode, a gate electrode and an active layer disposed between the auxiliary electrode and the gate electrode, wherein the active layer includes a channel portion overlapped with the gate electrode, a first connection portion disposed at one side of the channel portion, and a second connection portion disposed at the other side of the channel portion, and the channel portion includes a first portion overlapped with the auxiliary electrode and a second portion not overlapped with the auxiliary electrode. One embodiment of the present disclosure also provides a display apparatus comprising the thin film transistor.

公开(公告)号：US20210399142A1

公开(公告)日：2021-12-23

申请号：US17340937

申请日：2021-06-07

申请人： LG Display Co., Ltd.

发明人： ChanYong Jeong ,  JuHeyuck Baeck ,  Dohyung Lee ,  Younghyun Ko

IPC分类号： H01L29/786

摘要： Embodiments of the present disclosure relate to a thin film transistor array substrate and display device in which a semiconductor layer has a heterogeneous conductorization structure including heterogeneous conductorization portions having different electrical conductivity, and the gate insulator layer is not etched enough to expose the semiconductor layer between the source electrode part and the gate electrode part and between the drain electrode part and the gate electrode part, so that the possibility of damage to the semiconductor layer can be eliminated or reduced.

公开(公告)号：US11195956B2

公开(公告)日：2021-12-07

申请号：US16502312

申请日：2019-07-03

申请人： LG Display Co., Ltd.

发明人： JuHeyuck Baeck ,  Dohyung Lee ,  ChanYong Jeong

IPC分类号： H01L29/786 ,  H01L29/66 ,  H01L27/32 ,  H01L27/12

摘要： A thin-film transistor, a display device including a thin-film transistor, and a method of manufacturing a thin-film transistor are provided. A thin-film transistor includes: a semiconductor layer including: a first oxide semiconductor layer including gallium (Ga), a second oxide semiconductor layer, and a silicon semiconductor layer between the first oxide semiconductor layer and the second oxide semiconductor layer, and a gate electrode spaced apart from the semiconductor layer and partially overlapping at least a part of the semiconductor layer.

公开(公告)号：US11171246B2

公开(公告)日：2021-11-09

申请号：US16705767

申请日：2019-12-06

申请人： LG Display Co., Ltd.

发明人： SeHee Park ,  JungSeok Seo ,  PilSang Yun ,  Jeyong Jeon ,  Jaeyoon Park ,  ChanYong Jeong

IPC分类号： H01L29/78 ,  H01L29/49 ,  H01L29/786 ,  H01L29/66 ,  H01L29/24

摘要： A thin-film transistor, a display device including a thin-film transistor, and a method of manufacturing a thin-film transistor are provided. A thin-film transistor includes: a base substrate, a semiconductor layer on the base substrate, the semiconductor layer including: a first oxide semiconductor layer, and a second oxide semiconductor layer on the first oxide semiconductor layer, the second oxide semiconductor layer having a Hall mobility smaller than a Hall mobility of the first oxide semiconductor layer, and a gate electrode spaced apart from the semiconductor layer and partially overlapping the semiconductor layer, wherein a concentration of gallium (Ga) in the second oxide semiconductor layer is higher than a concentration of gallium (Ga) in the first oxide semiconductor layer.