- Patent Title: Systems and methods for write and flush support in hybrid memory
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Application No.: US15669851Application Date: 2017-08-04
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Publication No.: US11175853B2Publication Date: 2021-11-16
- Inventor: Mu-Tien Chang , Dimin Niu , Hongzhong Zheng , Heehyun Nam , Youngjin Cho , Sun-Young Lim
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Lewis Roca Rothgerber Christie LLP
- Main IPC: G06F3/00
- IPC: G06F3/00 ; G06F12/00 ; G06F3/06 ; G06F12/0895 ; G06F12/0868 ; G06F13/16 ; G06F12/02

Abstract:
A memory module includes a memory controller including: a host layer; a media layer coupled to a non-volatile memory; and a logic core coupled to the host layer, the media layer, and a volatile memory, the logic core storing a first write group table including a plurality of rows, and the logic core being configured to: receive a persistent write command including a cache line address and a write group identifier; receive data associated with the persistent write command; write the data to the volatile memory at the cache line address; store the cache line address in a selected buffer of a plurality of buffers in a second write group table, the selected buffer corresponding to the write group identifier; and update a row of the first write group table to identify locations of the selected buffer containing valid entries, the row corresponding to the write group identifier.
Public/Granted literature
- US20180329651A1 SYSTEMS AND METHODS FOR WRITE AND FLUSH SUPPORT IN HYBRID MEMORY Public/Granted day:2018-11-15
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