Invention Grant
- Patent Title: Memory device with shared amplifier circuitry
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Application No.: US16518146Application Date: 2019-07-22
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Publication No.: US11176974B2Publication Date: 2021-11-16
- Inventor: Syed M. Alam , Thomas S. Andre
- Applicant: Everspin Technologies, Inc.
- Applicant Address: US AZ Chandler
- Assignee: Everspin Technologies, Inc.
- Current Assignee: Everspin Technologies, Inc.
- Current Assignee Address: US AZ Chandler
- Agency: Bookoff McAndrews, PLLC
- Main IPC: G11C7/12
- IPC: G11C7/12 ; G11C7/06 ; G11C5/06

Abstract:
In some examples, a memory device may have at least a first and a second memory array. In some cases, a portion of the bit cells of the first memory array may be coupled to first PMOS-follower circuitry and to second PMOS-follower circuitry. A portions of the bit cells of the second memory array may also be coupled to the second PMOS-follower circuitry and to third PMOS-follower circuitry. Additionally, in some cases, the portion of bit cells of both the first memory array and the second memory array may be coupled to shared preamplifier circuitry.
Public/Granted literature
- US20190355398A1 MEMORY DEVICE WITH SHARED AMPLIFIER CIRCUITRY Public/Granted day:2019-11-21
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