- 专利标题: Semiconductive device with mesa structure and method of fabricating the same
-
申请号: US16726263申请日: 2019-12-24
-
公开(公告)号: US11177377B2公开(公告)日: 2021-11-16
- 发明人: Chun-Ming Chang , Wen-Jung Liao , Chun-Liang Hou
- 申请人: UNITED MICROELECTRONICS CORP.
- 申请人地址: TW Hsin-Chu
- 专利权人: UNITED MICROELECTRONICS CORP.
- 当前专利权人: UNITED MICROELECTRONICS CORP.
- 当前专利权人地址: TW Hsin-Chu
- 代理商 Winston Hsu
- 优先权: CN201911211806.4 20191202
- 主分类号: H01L29/778
- IPC分类号: H01L29/778 ; H01L29/20 ; H01L29/205 ; H01L29/06 ; H01L29/66 ; H01L21/265 ; H01L21/306 ; H01L21/02 ; H01L29/34
摘要:
A mesa structure includes a substrate. A mesa protrudes out of the substrate. The mesa includes a slope and a top surface. The slope surrounds the top surface. A lattice damage area is disposed at inner side of the slope. The mesa can optionally further includes an insulating layer covering the lattice damage area. The insulating layer includes an oxide layer or a nitride layer.