Invention Grant
- Patent Title: Method of growing titanium nitride on silicon substrate free from silicon nitride interface by using a titanium seed layer
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Application No.: US16676278Application Date: 2019-11-06
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Publication No.: US11177549B2Publication Date: 2021-11-16
- Inventor: Aakash Pushp , Benjamin Madon , M A Mueed
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Schmeiser, Olsen & Watts, LLP
- Agent Randall Bluestone
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01P7/00 ; C23C16/34 ; C23C16/50 ; H01P11/00
Abstract:
A titanium (Ti) seed layer is formed from a Ti source directly on a surface of a substrate, where the surface is substantially free of oxide and nitride, and a reactive nitrogen species is introduced from a nitrogen plasma source and additional Ti is introduced from the Ti source, wherein the nitrogen plasma: (a) reacts with the Ti seed layer to form TiN and (b) reacts with the additional Ti to form additional TiN. The TiN and additional TiN collectively form a TiN superconducting layer that directly contacts the surface of the substrate.
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Information query
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