公开(公告)号：US11177549B2

公开(公告)日：2021-11-16

申请号：US16676278

申请日：2019-11-06

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Aakash Pushp ,  Benjamin Madon ,  M A Mueed

IPC: H01L21/00 ,  H01P7/00 ,  C23C16/34 ,  C23C16/50 ,  H01P11/00

Abstract: A titanium (Ti) seed layer is formed from a Ti source directly on a surface of a substrate, where the surface is substantially free of oxide and nitride, and a reactive nitrogen species is introduced from a nitrogen plasma source and additional Ti is introduced from the Ti source, wherein the nitrogen plasma: (a) reacts with the Ti seed layer to form TiN and (b) reacts with the additional Ti to form additional TiN. The TiN and additional TiN collectively form a TiN superconducting layer that directly contacts the surface of the substrate.

公开(公告)号：US20230137983A1

公开(公告)日：2023-05-04

申请号：US17452702

申请日：2021-10-28

Applicant: International Business Machines Corporation ,  École Supérieure de Physique et de Chimie Industrielles

Inventor： Aakash Pushp ,  M A Mueed ,  Benjamin Madon ,  Noel Arellano ,  Krystelle Lionti ,  Gregory Michael Wallraff ,  Anthony Bock Fong ,  Brian Peter Hughes ,  Vincent Ouazan-Reboul

IPC: H01L21/311 ,  H01L21/027 ,  H01L21/033 ,  G03F7/20

Abstract: Forming a hardmask layer for reactive ion etching includes depositing a hardmask above an underlayer. The hardmask includes a layer of magnesium oxide having a thickness of up to 10 nm. A resist layer is deposited above the hardmask and developed to form a pattern that exposes portions of the hardmask. The pattern is transferred from the resist layer to the hardmask by rinsing exposed portions of the hardmask with a deionized water solution.