- 专利标题： Semiconductor device
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申请号： US16791798申请日： 2020-02-14
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公开(公告)号： US11183469B2公开(公告)日： 2021-11-23
- 发明人: Yusuke Akada , Rina Kadowaki , Hiroyuki Maeda
- 申请人： Kioxia Corporation
- 申请人地址： JP Minato-ku
- 专利权人： Kioxia Corporation
- 当前专利权人： Kioxia Corporation
- 当前专利权人地址： JP Minato-ku
- 代理机构： Oblon, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JPJP2018-160575 20180829,JPJP2018-218600 20181121
- 主分类号： H01L23/58
- IPC分类号： H01L23/58 ; H01L23/31 ; H01L21/82
摘要：
A semiconductor device according to the present embedment includes a substrate having a first region provided with a semiconductor element and a second region provided from the first region to an end. A material film is provided above the first and second regions. A first metal film is provided on the material film in the second region or on the material film between the first region and the second region. A trench, which caves in toward the substrate from a surface of the material film in the first region and from a surface of the material film under the first metal film, is provided in the material film between the first metal film and the first region.
公开/授权文献
- US20200185340A1 SEMICONDUCTOR DEVICE 公开/授权日：2020-06-11
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