公开(公告)号：US11610852B2

公开(公告)日：2023-03-21

申请号：US17513212

申请日：2021-10-28

申请人： Kioxia Corporation

发明人： Yusuke Akada ,  Rina Kadowaki ,  Hiroyuki Maeda

IPC分类号： H01L23/58 ,  H01L21/82 ,  H01L23/31

摘要： A semiconductor device according to the present embedment includes a substrate having a first region provided with a semiconductor element and a second region provided from the first region to an end. A material film is provided above the first and second regions. A first metal film is provided on the material film in the second region or on the material film between the first region and the second region. A trench, which caves in toward the substrate from a surface of the material film in the first region and from a surface of the material film under the first metal film, is provided in the material film between the first metal film and the first region.

公开(公告)号：US11183469B2

公开(公告)日：2021-11-23

申请号：US16791798

申请日：2020-02-14

申请人： Kioxia Corporation

发明人： Yusuke Akada ,  Rina Kadowaki ,  Hiroyuki Maeda

IPC分类号： H01L23/58 ,  H01L23/31 ,  H01L21/82

摘要： A semiconductor device according to the present embedment includes a substrate having a first region provided with a semiconductor element and a second region provided from the first region to an end. A material film is provided above the first and second regions. A first metal film is provided on the material film in the second region or on the material film between the first region and the second region. A trench, which caves in toward the substrate from a surface of the material film in the first region and from a surface of the material film under the first metal film, is provided in the material film between the first metal film and the first region.

公开(公告)号：US12132013B2

公开(公告)日：2024-10-29

申请号：US18171954

申请日：2023-02-21

申请人： KIOXIA CORPORATION

发明人： Yusuke Akada ,  Rina Kadowaki ,  Hiroyuki Maeda

IPC分类号： H01L23/58 ,  H01L21/82 ,  H01L23/31

CPC分类号： H01L23/585 ,  H01L21/82 ,  H01L23/3171

摘要： A semiconductor device according to the present embedment includes a substrate having a first region provided with a semiconductor element and a second region provided from the first region to an end. A material film is provided above the first and second regions. A first metal film is provided on the material film in the second region or on the material film between the first region and the second region. A trench, which caves in toward the substrate from a surface of the material film in the first region and from a surface of the material film under the first metal film, is provided in the material film between the first metal film and the first region.