Invention Grant
- Patent Title: Semiconductor device
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Application No.: US16681329Application Date: 2019-11-12
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Publication No.: US11183471B2Publication Date: 2021-11-23
- Inventor: Yasutaka Nakashiba
- Applicant: RENESAS ELECTRONICS CORPORATION
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: McDermott Will & Emery LLP
- Main IPC: H01L23/64
- IPC: H01L23/64 ; H01L23/00 ; H01L23/66
Abstract:
A semiconductor device includes a semiconductor substrate, a multilayer wiring layer, a first inductor element, and a first capacitor element. The multilayer wiring layer is formed on the semiconductor substrate. The first inductor element and the first capacitor element are formed in the multilayer wiring layer. The first capacitor element is formed in the same layer as a layer in which the first inductor element is formed. The first capacitor element is formed inside the first inductor element in plan view.
Public/Granted literature
- US20210143112A1 SEMICONDUCTOR DEVICE Public/Granted day:2021-05-13
Information query
IPC分类:
