- 专利标题： Doped aluminum nitride crystals and methods of making them
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申请号： US16874813申请日： 2020-05-15
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公开(公告)号： US11183567B2公开(公告)日： 2021-11-23
- 发明人: Glen A. Slack , Leo J. Schowalter
- 申请人： Glen A. Slack , Leo J. Schowalter
- 申请人地址： US NY Scotia; US NY Latham
- 专利权人： Glen A. Slack,Leo J. Schowalter
- 当前专利权人： Glen A. Slack,Leo J. Schowalter
- 当前专利权人地址： US NY Scotia; US NY Latham
- 代理机构： Morgan, Lewis & Bockius LLP
- 主分类号： C30B29/38
- IPC分类号： C30B29/38 ; H01L29/207 ; C30B23/00 ; C30B29/40 ; H01L29/20 ; H01L21/02 ; H01L21/225 ; H01L33/32
摘要：
Fabrication of doped AlN crystals and/or AlGaN epitaxial layers with high conductivity and mobility is accomplished by, for example, forming mixed crystals including a plurality of impurity species and electrically activating at least a portion of the crystal.
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