Invention Grant
- Patent Title: Methods, apparatus, and systems to facilitate a fault triggered diode emulation mode of a transistor
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Application No.: US16366813Application Date: 2019-03-27
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Publication No.: US11183832B2Publication Date: 2021-11-23
- Inventor: Serkan Dusmez , Nathan Richard Schemm , Salil Chellappan
- Applicant: Texas Instruments Incorporated
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Michelle F. Murray; Charles A. Brill; Frank D. Cimino
- Main IPC: H02H5/00
- IPC: H02H5/00 ; H02H5/04 ; H02H1/00 ; H02H7/12

Abstract:
Methods, systems, and apparatus to facilitate a fault triggered diode emulation mode of a transistor. An example apparatus includes a driver to output a control signal to a gate terminal of a transistor of a power converter; and a diode emulation control circuit to, in response to determining a fault corresponding to the transistor, enable the transistor when current flows in a direction from a source terminal of the transistor to a drain terminal of the transistor.
Public/Granted literature
- US20200313421A1 METHODS, APPARATUS, AND SYSTEMS TO FACILITATE A FAULT TRIGGERED DIODE EMULATION MODE OF A TRANSISTOR Public/Granted day:2020-10-01
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