公开(公告)号：US11621551B2

公开(公告)日：2023-04-04

申请号：US17505757

申请日：2021-10-20

Applicant: Texas Instruments Incorporated

Inventor： Serkan Dusmez ,  Nathan Richard Schemm ,  Salil Chellappan

IPC: H02H5/00 ,  H02H5/04 ,  H02H1/00 ,  H02H7/12

Abstract: Methods, systems, and apparatus to facilitate a fault triggered diode emulation mode of a transistor. An example apparatus includes a driver to output a control signal to a gate terminal of a transistor of a power converter; and a diode emulation control circuit to, in response to determining a fault corresponding to the transistor, enable the transistor when current flows in a direction from a source terminal of the transistor to a drain terminal of the transistor.

公开(公告)号：US10686362B2

公开(公告)日：2020-06-16

申请号：US16457005

申请日：2019-06-28

Applicant: Texas Instruments Incorporated

Inventor： Serkan Dusmez

IPC: H02M7/219 ,  H02M1/08 ,  H02M7/217 ,  H02M1/42 ,  H02M1/00 ,  H02M7/162

Abstract: In some examples, a device comprises a power conversion circuit that includes: an inductor having a first end coupled to an input voltage terminal; a first switch coupled to a second end of the inductor at a first node; a second switch coupled to the second end of the inductor and the first switch at the first node; a third switch coupled to the first switch and to another input voltage terminal at a second node; and a fourth switch coupled to the second switch and to the another input voltage terminal at the second node. The device also comprises a control circuit comprising a variable delay circuit coupled to the first and second switches; and a controller coupled to the variable delay circuit, to an inductor current sensor, and to an input voltage sensor, the inductor current sensor coupled to the inductor and the input voltage sensor coupled to the input voltage terminal and the another input voltage terminal.

公开(公告)号：US11239747B2

公开(公告)日：2022-02-01

申请号：US16710851

申请日：2019-12-11

Applicant: Texas Instruments Incorporated

Inventor： Serkan Dusmez

IPC: H02M1/42 ,  G01R1/20 ,  G01R19/00 ,  H02M1/00

Abstract: Current sensing apparatus in power factor correction circuits and related methods are disclosed. An example power factor correction circuit includes a first Gallium Nitride (GaN) transistor having a first current terminal and a second current terminal, a second GaN transistor having a third current terminal and a fourth current terminal, a first diode having a first anode, a second diode having a second anode, the second anode coupled to the first anode, and a resistor having a first terminal and a second terminal, the first terminal coupled to the second current terminal and the fourth current terminal, the second terminal coupled to the first anode and the second anode.

公开(公告)号：US10381915B1

公开(公告)日：2019-08-13

申请号：US16152206

申请日：2018-10-04

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Serkan Dusmez

IPC: H02M1/08 ,  H02M7/217 ,  H02M1/42 ,  H02M1/00 ,  H02M7/219 ,  H02M7/162

Abstract: In some examples, a device comprises a power conversion circuit that includes: an inductor having a first end coupled to an input voltage terminal; a first switch coupled to a second end of the inductor at a first node; a second switch coupled to the second end of the inductor and the first switch at the first node; a third switch coupled to the first switch and to another input voltage terminal at a second node; and a fourth switch coupled to the second switch and to the another input voltage terminal at the second node. The device also comprises a control circuit comprising a variable delay circuit coupled to the first and second switches; and a controller coupled to the variable delay circuit, to an inductor current sensor, and to an input voltage sensor, the inductor current sensor coupled to the inductor and the input voltage sensor coupled to the input voltage terminal and the another input voltage terminal.

公开(公告)号：US11121704B2

公开(公告)日：2021-09-14

申请号：US15960537

申请日：2018-04-23

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Cetin Kaya ,  Serkan Dusmez

IPC: H03K3/011 ,  H03K3/017 ,  H03K17/14 ,  H03K5/00

Abstract: In described examples, a first power switching circuit receives a power switching control signal and activates a first power switch in response to the power switching control signal. A second power switching circuit receives the power switching control, activates a second power switch in response to the power switching control signal, and determines a first power switching delay in response to temperature indications of the first and second power switches. The second power switching circuit activates the second power switch at a first delayed time after the activation of the first power switch, where the first delayed time follows the activation of the first power switch by the determined first power switching delay.

公开(公告)号：US20200313421A1

公开(公告)日：2020-10-01

申请号：US16366813

申请日：2019-03-27

Applicant: Texas Instruments Incorporated

Inventor： Serkan Dusmez ,  Nathan Richard Schemm ,  Salil Chellappan

IPC: H02H5/04 ,  H02H7/12 ,  H02H1/00

Abstract: Methods, systems, and apparatus to facilitate a fault triggered diode emulation mode of a transistor. An example apparatus includes a driver to output a control signal to a gate terminal of a transistor of a power converter; and a diode emulation control circuit to, in response to determining a fault corresponding to the transistor, enable the transistor when current flows in a direction from a source terminal of the transistor to a drain terminal of the transistor.

公开(公告)号：US20190326887A1

公开(公告)日：2019-10-24

申请号：US15960537

申请日：2018-04-23

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Cetin Kaya ,  Serkan Dusmez

IPC: H03K3/011 ,  H03K17/14 ,  H03K3/017

Abstract: In described examples, a first power switching circuit receives a power switching control signal and activates a first power switch in response to the power switching control signal. A second power switching circuit receives the power switching control, activates a second power switch in response to the power switching control signal, and determines a first power switching delay in response to temperature indications of the first and second power switches. The second power switching circuit activates the second power switch at a first delayed time after the activation of the first power switch, where the first delayed time follows the activation of the first power switch by the determined first power switching delay.

公开(公告)号：US20220037873A1

公开(公告)日：2022-02-03

申请号：US17505757

申请日：2021-10-20

Applicant: Texas Instruments Incorporated

Inventor： Serkan Dusmez ,  Nathan Richard Schemm ,  Salil Chellappan

IPC: H02H5/04 ,  H02H1/00 ,  H02H7/12

Abstract: Methods, systems, and apparatus to facilitate a fault triggered diode emulation mode of a transistor. An example apparatus includes a driver to output a control signal to a gate terminal of a transistor of a power converter; and a diode emulation control circuit to, in response to determining a fault corresponding to the transistor, enable the transistor when current flows in a direction from a source terminal of the transistor to a drain terminal of the transistor.

公开(公告)号：US20210184565A1

公开(公告)日：2021-06-17

申请号：US16710851

申请日：2019-12-11

Applicant: Texas Instruments Incorporated

Inventor： Serkan Dusmez

IPC: H02M1/42 ,  G01R19/00 ,  G01R1/20

Abstract: Current sensing apparatus in power factor correction circuits and related methods are disclosed. An example power factor correction circuit includes a first Gallium Nitride (GaN) transistor having a first current terminal and a second current terminal, a second GaN transistor having a third current terminal and a fourth current terminal, a first diode having a first anode, a second diode having a second anode, the second anode coupled to the first anode, and a resistor having a first terminal and a second terminal, the first terminal coupled to the second current terminal and the fourth current terminal, the second terminal coupled to the first anode and the second anode.

公开(公告)号：US11183832B2

公开(公告)日：2021-11-23

申请号：US16366813

申请日：2019-03-27

Applicant: Texas Instruments Incorporated

Inventor： Serkan Dusmez ,  Nathan Richard Schemm ,  Salil Chellappan

IPC: H02H5/00 ,  H02H5/04 ,  H02H1/00 ,  H02H7/12

Abstract: Methods, systems, and apparatus to facilitate a fault triggered diode emulation mode of a transistor. An example apparatus includes a driver to output a control signal to a gate terminal of a transistor of a power converter; and a diode emulation control circuit to, in response to determining a fault corresponding to the transistor, enable the transistor when current flows in a direction from a source terminal of the transistor to a drain terminal of the transistor.