Invention Grant
- Patent Title: Integrated circuit (IC) device
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Application No.: US16674049Application Date: 2019-11-05
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Publication No.: US11189570B2Publication Date: 2021-11-30
- Inventor: Jin-a Kim , Yong-kwan Kim , Se-keun Park , Ho-in Ryu
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Muir Patent Law, PLLC
- Priority: KR10-2018-0163310 20181217
- Main IPC: H01L23/535
- IPC: H01L23/535 ; H01L27/108

Abstract:
An integrated circuit (IC) device includes a line structure including a conductive line formed on a substrate and an insulation capping pattern that covers the conductive line; an insulation spacer covering a sidewall of the line structure; a conductive plug spaced apart from the conductive line in a first horizontal direction with the insulation spacer between the conductive plug and the conductive line; a conductive landing pad arranged on the conductive plug to vertically overlap the conductive plug; and a capping layer including a first portion between the conductive landing pad and the insulation capping pattern, wherein the first portion of the capping layer has a shape in which a width in the first horizontal direction gradually increases as a distance from the substrate increases between the conductive landing pad and the insulation capping pattern.
Information query
IPC分类: