公开(公告)号：US20200168611A1

公开(公告)日：2020-05-28

申请号：US16566510

申请日：2019-09-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae-hyeon Jeon ,  Se-keun Park ,  Dong-sik Park ,  Seok-ho Shin

IPC: H01L27/108 ,  H01L29/06 ,  H01L29/423 ,  H01L21/28 ,  H01L21/306

Abstract: Semiconductor devices are provided. A semiconductor device includes a substrate including a plurality of active regions that extend longitudinally in a direction and an isolation region that electrically isolates the plurality of active regions from each other. The semiconductor device includes a gate trench that extends across the plurality of active regions and the isolation region. The semiconductor device includes a gate structure that extends in the gate trench. The semiconductor device includes a gate dielectric layer that is between the gate trench and the gate structure, in each of the plurality of active regions. The gate structure has a first width in the direction in each of the plurality of active regions and has a second width in the direction in the isolation region that is different from the first width.

公开(公告)号：US11189570B2

公开(公告)日：2021-11-30

申请号：US16674049

申请日：2019-11-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin-a Kim ,  Yong-kwan Kim ,  Se-keun Park ,  Ho-in Ryu

IPC: H01L23/535 ,  H01L27/108

Abstract: An integrated circuit (IC) device includes a line structure including a conductive line formed on a substrate and an insulation capping pattern that covers the conductive line; an insulation spacer covering a sidewall of the line structure; a conductive plug spaced apart from the conductive line in a first horizontal direction with the insulation spacer between the conductive plug and the conductive line; a conductive landing pad arranged on the conductive plug to vertically overlap the conductive plug; and a capping layer including a first portion between the conductive landing pad and the insulation capping pattern, wherein the first portion of the capping layer has a shape in which a width in the first horizontal direction gradually increases as a distance from the substrate increases between the conductive landing pad and the insulation capping pattern.

公开(公告)号：US11177264B2

公开(公告)日：2021-11-16

申请号：US16566510

申请日：2019-09-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae-hyeon Jeon ,  Se-keun Park ,  Dong-sik Park ,  Seok-ho Shin

IPC: H01L27/108 ,  H01L29/06 ,  H01L29/423 ,  H01L21/306 ,  H01L21/28

Abstract: Semiconductor devices are provided. A semiconductor device includes a substrate including a plurality of active regions that extend longitudinally in a direction and an isolation region that electrically isolates the plurality of active regions from each other. The semiconductor device includes a gate trench that extends across the plurality of active regions and the isolation region. The semiconductor device includes a gate structure that extends in the gate trench. The semiconductor device includes a gate dielectric layer that is between the gate trench and the gate structure, in each of the plurality of active regions. The gate structure has a first width in the direction in each of the plurality of active regions and has a second width in the direction in the isolation region that is different from the first width.