公开(公告)号：US11189570B2

公开(公告)日：2021-11-30

申请号：US16674049

申请日：2019-11-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin-a Kim ,  Yong-kwan Kim ,  Se-keun Park ,  Ho-in Ryu

IPC: H01L23/535 ,  H01L27/108

Abstract: An integrated circuit (IC) device includes a line structure including a conductive line formed on a substrate and an insulation capping pattern that covers the conductive line; an insulation spacer covering a sidewall of the line structure; a conductive plug spaced apart from the conductive line in a first horizontal direction with the insulation spacer between the conductive plug and the conductive line; a conductive landing pad arranged on the conductive plug to vertically overlap the conductive plug; and a capping layer including a first portion between the conductive landing pad and the insulation capping pattern, wherein the first portion of the capping layer has a shape in which a width in the first horizontal direction gradually increases as a distance from the substrate increases between the conductive landing pad and the insulation capping pattern.