Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
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Application No.: US16570067Application Date: 2019-09-13
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Publication No.: US11195849B2Publication Date: 2021-12-07
- Inventor: Yasuhito Yoshimizu , Yuji Setta , Masaru Kito
- Applicant: Toshiba Memory Corporation
- Applicant Address: JP Minato-ku
- Assignee: Toshiba Memory Corporation
- Current Assignee: Toshiba Memory Corporation
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JPJP2019-050310 20190318
- Main IPC: H01L27/11582
- IPC: H01L27/11582 ; H01L23/00 ; H01L21/28 ; H01L21/02 ; H01L27/11573 ; H01L25/00 ; H01L25/18 ; H01L21/225 ; H01L21/683
Abstract:
In one embodiment, a semiconductor device includes a first film including a plurality of electrode layers and a plurality of insulating layers provided alternately in a first direction, and a first semiconductor layer provided in the first film via a charge storage layer and extending in the first direction. The device further includes a first conductive member provided in the first film and extending in the first direction, and a second semiconductor layer provided on the first film to contact the first semiconductor layer. The second semiconductor layer includes a first surface on a side of the first film, and a second surface on an opposite side of the first surface. The second surface is an uneven face protruding towards the first direction.
Public/Granted literature
- US20200303408A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2020-09-24
Information query
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