公开(公告)号：US11195849B2

公开(公告)日：2021-12-07

申请号：US16570067

申请日：2019-09-13

申请人： Toshiba Memory Corporation

发明人： Yasuhito Yoshimizu ,  Yuji Setta ,  Masaru Kito

IPC分类号： H01L27/11582 ,  H01L23/00 ,  H01L21/28 ,  H01L21/02 ,  H01L27/11573 ,  H01L25/00 ,  H01L25/18 ,  H01L21/225 ,  H01L21/683

摘要： In one embodiment, a semiconductor device includes a first film including a plurality of electrode layers and a plurality of insulating layers provided alternately in a first direction, and a first semiconductor layer provided in the first film via a charge storage layer and extending in the first direction. The device further includes a first conductive member provided in the first film and extending in the first direction, and a second semiconductor layer provided on the first film to contact the first semiconductor layer. The second semiconductor layer includes a first surface on a side of the first film, and a second surface on an opposite side of the first surface. The second surface is an uneven face protruding towards the first direction.

公开(公告)号：US09853052B1

公开(公告)日：2017-12-26

申请号：US15410909

申请日：2017-01-20

申请人： TOSHIBA MEMORY CORPORATION

发明人： Yuji Setta

IPC分类号： H01L27/11582 ,  H01L27/11519 ,  H01L27/11521 ,  H01L27/11526 ,  H01L27/11556 ,  H01L27/11565 ,  H01L27/11568 ,  H01L27/11573 ,  H01L21/28 ,  H01L21/02

CPC分类号： H01L27/11582 ,  H01L21/31144 ,  H01L27/11519 ,  H01L27/11526 ,  H01L27/11556 ,  H01L27/11565 ,  H01L27/11573

摘要： According to one embodiment, the circuit portion includes a transistor provided at a region separated from the first stacked portion in the substrate. The second stacked portion is provided above the circuit portion. The second stacked portion includes a plurality of first layers and a plurality of second layers. The first layers and the second layers include a first layer and a second layer stacked alternately. An insulating layer is provided above the circuit portion and provided above the substrate between the first stacked portion and the second stacked portion. A height of an uppermost first layer of the second stacked portion from a surface of the substrate is substantially equal to a height of an uppermost electrode layer of the first stacked portion from the surface of the substrate, or is higher than the height of the uppermost electrode layer.

公开(公告)号：US09741564B2

公开(公告)日：2017-08-22

申请号：US14813466

申请日：2015-07-30

申请人： Toshiba Memory Corporation

发明人： Yuji Setta ,  Taketo Kuriyama ,  Nobuhiro Komine

IPC分类号： G03F7/20 ,  H01L21/027

CPC分类号： H01L21/0274 ,  G03F7/2002

摘要： In a method of forming a mark pattern according to the embodiments, a film to be processed on a substrate is coated with a photosensitive film, and the photosensitive film is irradiated with exposure light via a mask. On the mask, a first circuit pattern having a first transmittance and a mark having a second transmittance and used to measure a superposition between films are arranged. By irradiating with the exposure light, a second circuit pattern having a first film thickness and a mark pattern having a second film thickness thinner than the first film thickness are formed on the substrate.