Invention Grant
- Patent Title: Memory arrays and methods used in forming a memory array comprising strings of memory cells
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Application No.: US16657498Application Date: 2019-10-18
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Publication No.: US11195850B2Publication Date: 2021-12-07
- Inventor: Matthew J. King
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Well St. John P.S.
- Main IPC: H01L27/11582
- IPC: H01L27/11582 ; H01L21/311 ; H01L27/11565 ; H01L21/3213 ; H01L27/11556 ; H01L21/02 ; H01L21/28 ; H01L27/11519
Abstract:
A method used in forming a memory array comprising strings of memory cells comprises forming a stack comprising vertically-alternating first tiers and second tiers. Intervening material is formed into the stack laterally-between and longitudinally-along immediately-laterally-adjacent memory block regions. The forming of the intervening material comprises forming pillars laterally-between and longitudinally-spaced-along the immediately-laterally-adjacent memory-block regions. The pillars individually extend through multiple of each of the first tiers and the second tiers. After forming the pillars, an intervening opening is formed individually alongside and between immediately-longitudinally-adjacent of the pillars. Fill material is formed in the intervening openings. Other embodiments, including structure, are disclosed.
Public/Granted literature
- US20210118899A1 Memory Arrays And Methods Used In Forming A Memory Array Comprising Strings Of Memory Cells Public/Granted day:2021-04-22
Information query
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